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1. (WO2015043028) LOCAL ALUMINUM BACK SURFACE FIELD SOLAR BATTERY WITH TWO LIGHT-PERVIOUS SURFACES, AND PREPARATION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/043028 International Application No.: PCT/CN2013/085642
Publication Date: 02.04.2015 International Filing Date: 22.10.2013
IPC:
H01L 31/18 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/0216 (2014.01) ,H01L 31/0224 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
Applicants:
晶澳(扬州)太阳能科技有限公司 JA SOLAR TECHNOLOGY YANGZHOU CO., LTD. [CN/CN]; 中国江苏省扬州市 扬州经济开发区建华路1号 NO.1, Jianhua Road, Economic Development Zone Yangzhou, Jiangsu 225131, CN
晶澳太阳能有限公司 JA SOLAR CO., LTD. [CN/CN]; 中国河北省邢台市 宁晋县晶龙大街267号 No 267, Jinglong Street, Ningjin Xingtai, Hebei 055550, CN
Inventors:
蒋秀林 JIANG, Xiulin; CN
单伟 SHAN, Wei; CN
Agent:
广州知友专利商标代理有限公司 GUANGZHOU ZHIYOU PATENT & TRADEMARK AGENCY CO., LTD.; 中国广东省广州市 越秀区东风东路555号粤海集团大厦2604室 Room 2604 Yuehai Group Building,NO.555 Dongfeng Road East, Yuexiu Guangzhou, Guangdong 510050, CN
Priority Data:
201310440765.225.09.2013CN
Title (EN) LOCAL ALUMINUM BACK SURFACE FIELD SOLAR BATTERY WITH TWO LIGHT-PERVIOUS SURFACES, AND PREPARATION METHOD THEREFOR
(FR) PILE SOLAIRE À CHAMP DE SURFACE ARRIÈRE EN ALUMINIUM LOCAL COMPORTANT DEUX SURFACES PERMÉABLES À LA LUMIÈRE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 一种双面透光的局部铝背场太阳能电池及其制备方法
Abstract:
(EN) A local aluminum back surface field solar battery with two light-pervious surfaces comprises a silicon substrate; an emitting electrode, a front antireflection passive film and a front electrode all disposed on a front surface of the silicon substrate; and a back passive film, a back surface field and a back electrode all disposed on a back surface of the silicon substrate. The back surface field is a local aluminum back surface field. A hole or a groove is formed in the back passive film, a region where the hole or the groove is formed is covered with linear aluminum paste, part of the back passive film is reserved not to be covered with the aluminum paste, and a local aluminum back surface field is formed in the region where the hole or the groove is formed after sintering. The local aluminum back surface field is in communication with the back electrode. The back passive layer (film) of the solar battery is not completely covered with the aluminum paste, the battery can absorb part of incident light or scattered light on the back, and currents of the battery and an assembly are increased, thereby improving the photoelectric conversion efficiency of the battery and the assembly. Also disclosed is a method for preparing the local aluminum back surface field crystalline silicon solar battery with two light-pervious surfaces.
(FR) L'invention concerne une pile solaire à champ de surface arrière en aluminium local comportant deux surfaces perméables à la lumière qui comprend un substrat de silicium; une électrode émettrice, une pellicule passive antireflet avant et une électrode avant toutes disposées sur une surface avant du substrat de silicium; et une pellicule passive arrière, un champ de surface arrière et une électrode arrière tous disposés sur une surface arrière du substrat de silicium. Le champ de surface arrière est un champ de surface arrière en aluminium local. Un trou ou un sillon est formé dans la pellicule passive arrière, une zone où le trou ou sillon est formé est couverte de pâte d'aluminium linéaire, une partie de la pellicule passive arrière est réservée pour ne pas être couverte de la pâte d'aluminium, et un champ de surface arrière en aluminium local est formé dans la zone où le trou ou le sillon est formé après frittage. Le champ de surface arrière en aluminium local est en communication avec l'électrode arrière. La couche (pellicule) passive arrière de la pile solaire n'est pas complètement recouverte de pâte d'aluminium, la pile peut absorber une partie de la lumière incidente ou de la lumière diffusée sur l'arrière, et les courants de la pile et d'un ensemble sont accrus, améliorant ainsi le rendement de conversion photoélectrique de la pile et de l'ensemble. L'invention concerne aussi un procédé de préparation de la pile solaire en silicium cristallin à champ de surface arrière en aluminium local comportant deux surfaces perméables à la lumière.
(ZH) 一种双面透光的局部铝背场晶体硅太阳能电池,包括硅基体,设于硅基体正面的发射极、正面减反射钝化膜和正面电极,以及设于硅基体背面的背面钝化膜、背电场和背电极,所述背电场为局部铝背场,其通过在背面钝化膜上开孔或者开槽,在开孔或者开槽区域采用线型铝浆覆盖所述开孔或者开槽区域,并保留部分背面钝化膜不被铝浆所覆盖,烧结后在开孔或者开槽区域形成局部铝背场,所述局部铝背场与所述背电极相连通。该太阳能电池背面钝化层(膜)没有完全被铝浆覆盖,电池可以吸收部分背面入射或者散射的光线,增加了电池和组件的电流,从而提高了电池和组件的光电转换效率。还公开了上述双面透光的局部铝背场晶体硅太阳能电池的制备方法。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)