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1. (WO2015043008) METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE

Pub. No.:    WO/2015/043008    International Application No.:    PCT/CN2013/085364
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Fri Oct 18 01:59:59 CEST 2013
IPC: H01L 21/77
H01L 29/786
H01L 29/423
H01L 29/24
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: WANG, Jun
王俊
Title: METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE
Abstract:
Provided is a method for manufacturing a thin film transistor array substrate. The thin film transistor array substrate is of a top gate structure. According to the method for manufacturing the thin film transistor array substrate, the TFT array substrate is manufactured by performing masking three times, by utilizing an indium gallium zinc oxide to manufacture a thin film transistor in the thin film transistor array substrate, the pixel electrode charging speed of the thin film transistor can be greatly improved, the pixel response speed is improved, the faster refresh rate is achieved, the pixel line scanning speed is greatly improved due to faster response simultaneously, and ultrahigh resolution of a thin film transistor liquid crystal display is probable; besides, a masking process is only performed three times according to the manufacturing method, the processing steps can be remarkably reduced, processing time is shortened, production cost is effectively reduced, production efficiency is improved, and productivity is improved.