WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2015041444) SOLAR CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/041444    International Application No.:    PCT/KR2014/008616
Publication Date: 26.03.2015 International Filing Date: 16.09.2014
IPC:
H01L 31/04 (2014.01), H01L 31/0236 (2006.01)
Applicants: LG INNOTEK CO., LTD. [KR/KR]; Seoul Square, 416, Hangang-daero Jung-gu Seoul 100-714 (KR)
Inventors: CHO, Ho Gun; (KR)
Agent: KIM, Ki Moon; (KR)
Priority Data:
10-2013-0111658 17.09.2013 KR
Title (EN) SOLAR CELL
(FR) PHOTOPILE
(KO) 태양전지
Abstract: front page image
(EN)A solar cell according to one embodiment comprises: a support substrate; a rear electrode layer disposed on the support substrate; a light absorption layer disposed on the rear electrode layer; a buffer layer disposed on the light absorption layer; and a front electrode layer disposed on the buffer layer, wherein the rear electrode layer has a first through hole passing therethrough, and the first through hole has an area of approximately 50% or less of the total area of the rear electrode layer.
(FR)Selon un mode de réalisation, la présente invention concerne une photopile comprenant : un substrat de support; une couche d'électrode arrière disposée sur le substrat de support; une couche d'absorption de lumière disposée sur la couche d'électrode arrière; une couche tampon disposée sur la couche d'absorption de lumière; et une couche d'électrode avant disposée sur la couche tampon, la couche d'électrode arrière comportant un premier trou traversant passant à travers celle-ci, et le premier trou traversant présentant une superficie inférieure ou égale à environ 50 % de la superficie totale de la couche d'électrode arrière.
(KO)실시예에 따른 태양전지는, 지지기판; 상기 지지기판 상에 배치되는 후면 전극층; 상기 후면 전극층 상에 배치되는 광 흡수층; 상기 광 흡수층 상에 배치되는 버퍼층; 및 상기 버퍼층 상에 배치되는 전면 전극층을 포함하고, 상기 후면 전극층 상에는 상기 후면 전극층을 관통하는 제 1 관통홈이 형성되고, 상기 제 1 관통홈은 상기 후면 전극층의 전체 면적에 대해 약 50% 이하의 면적만큼 형성된다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)