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1. (WO2015041152) OSCILLATION DEVICE AND MANUFACTURING METHOD THEREFORE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/041152    International Application No.:    PCT/JP2014/074131
Publication Date: 26.03.2015 International Filing Date: 11.09.2014
IPC:
H03H 9/24 (2006.01), H03H 3/02 (2006.01)
Applicants: MURATA MANUFACTURING CO., LTD. [JP/JP]; 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555 (JP)
Inventors: YAMADA, Hiroshi; (JP).
UMEDA, Keiichi; (JP).
KISHI, Takehiko; (JP).
NISHIMURA, Toshio; (JP)
Agent: MIYAZAKI & METSUGI; Chuo Odori FN Bldg., 3-8, Tokiwamachi 1-chome, Chuo-ku, Osaka-shi, Osaka 5400028 (JP)
Priority Data:
2013-195502 20.09.2013 JP
Title (EN) OSCILLATION DEVICE AND MANUFACTURING METHOD THEREFORE
(FR) DISPOSITIF D'OSCILLATION ET PROCÉDÉ DE PRODUCTION ASSOCIÉ
(JA) 振動装置及びその製造方法
Abstract: front page image
(EN)Provided is an oscillation device that can suppress fluctuations in resonance frequency due to temperature changes. An oscillation device (1) comprises the following: a support part (2); oscillation arms (3a, 3b, 3c) that are connected to the support part (2) and that each have an n-type Si layer (11) which is a degenerate semiconductor; and electrodes (16, 17) provided so as to oscillate the oscillation arms (3a, 3b, 3c). Silicon oxide films (12, 13) containing impurities are provided so as to touch the lower surface of the n-type Si layer (11).
(FR)La présente invention concerne un dispositif d'oscillation qui peut supprimer les variations de fréquence de résonance issues de changements de température. Un dispositif d'oscillation (1) comprend les éléments suivants : une partie (2) de support ; des bras d'oscillation (3a, 3b, 3c) qui sont reliés à la partie (2) de support et qui ont chacun une couche (11) de Si de type n qui est un semi-conducteur dégénéré ; et des électrodes (16, 17) disposées pour faire osciller les bras d'oscillation (3a, 3b, 3c). Des films (12, 13) de silice contenant des impuretés sont disposés pour entrer en contact avec la surface inférieure de la couche (11) de Si de type n.
(JA) 温度変化による共振周波数のばらつきを抑制することができる、振動装置を提供する。 支持部2と、上記支持部2に接続されており、かつ縮退半導体であるn型Si層11を有する振動腕3a,3b,3cと、上記振動腕3a,3b,3cを励振させるように設けられている電極16,17とを備え、上記n型Si層11の下面に接するように、不純物を含有するシリコン酸化膜12,13が設けられている、振動装置1。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)