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1. (WO2015039274) TI-IGBT DEVICE AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/039274    International Application No.:    PCT/CN2013/083602
Publication Date: 26.03.2015 International Filing Date: 17.09.2013
IPC:
H01L 21/331 (2006.01), H01L 29/739 (2006.01)
Applicants: JIANGSU CAS-IGBT TECHNOLOGY CO., LTD [CN/CN]; Floor 10, Building C, China Meme-Sensor Park No.200 Linghu Street, New District Wuxi, Jiangsu 214135 (CN).
INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES [CN/CN]; No. 3 Beitucheng West Road, Chaoyang District Beijing 100029 (CN).
JIANGSU CAS-IGBT TECHNOLOGY CO., LTD [CN/CN]; Floor 10, Building C, China Meme-Sensor Park No. 200 Linghu Street, New District Wuxi, Jiangsu 214135 (CN)
Inventors: ZHANG, Wenliang; (CN).
ZHU, Yangjun; (CN).
TIAN, Xiaoli; (CN).
LU, Shuojin; (CN)
Agent: UNITALEN ATTORNEYS AT LAW; 7th Floor, Scitech Place No. 22, Jian Guo Men Wai Ave., Chaoyang District Beijing 100004 (CN)
Priority Data:
Title (EN) TI-IGBT DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF TI-IGBT ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种TI-IGBT器件及其制造方法
Abstract: front page image
(EN)A TI-IGBT device and a manufacturing method thereof are provided. The manufacturing method comprises: firstly processing the front surface structure and the back surface structure of the TI-IGBT device respectively on two different silicon dies, then bonding the two silicon dies together to form the whole TI-IGBT device structure. With the manufacturing method, back photoetching process is avoided, and only common processes in semiconductor processing are used to achieve the TI-IGBT device structure, therefore the manufacturing cost for TI-IGBT device is reduced. Comparing with the TI-IGBT device formed by a traditional method, the TI-IGBT device formed by the method has excellent performance and high reliability.
(FR)L'invention concerne un dispositif TI-IGBT et son procédé de fabrication. Le procédé de fabrication consiste : à traiter d'abord la structure de surface avant et la structure de surface arrière du dispositif TI-IGBT respectivement sur deux puces de silicium différentes et, ensuite, à relier les deux puces de silicium afin de former l'ensemble de la structure du dispositif TI-IGBT. Avec le procédé de fabrication, un traitement de photogravure arrière est évité et seuls des processus communs dans le traitement de semi-conducteurs sont utilisés pour former la structure du dispositif TI-IGBT. Par conséquent, le coût de fabrication du dispositif TI-IGBT est réduit. Par rapport au dispositif TI-IGBT formé par un procédé classique, le dispositif TI-IGBT formé par le procédé présente une excellente performance et une fiabilité élevée.
(ZH)提供一种TI-IGBT器件及其制造方法。该制造方法将TI-IGBT器件的正面结构和背面结构先分别在两个不同的硅片上进行加工,然后将两个硅片键合在一起,从而形成完整的TI-IGBT器件结构。该制造方法避免了使用背面光刻工艺,仅使用半导体加工的常规工艺即可实现TI-IGBT器件的结构,因此降低了TI-IGBT器件的生产成本。通过该方法制造的TI-IGBT器件相较传统方法制造的TI-IGBT器件,性能优良,可靠性高。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)