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1. (WO2015038158) SWITCHING RESISTANCE MEMORY DEVICES WITH INTERFACIAL CHANNELS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/038158    International Application No.:    PCT/US2013/059935
Publication Date: 19.03.2015 International Filing Date: 16.09.2013
IPC:
H01L 27/115 (2006.01), H01L 21/8247 (2006.01)
Applicants: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US/US]; 11445 Compaq Center Drive West Houston, TX 77070 (US)
Inventors: WANG, Shih-Yuan; (US).
YANG, Jianhua; (US).
WILLIAMS, R Stanley; (US)
Agent: COLLINS, David, W.; Hewlett Packard Enterprise 3404 E. Harmony Road Mail Stop 79 Fort Collins, CO 80528 (US)
Priority Data:
Title (EN) SWITCHING RESISTANCE MEMORY DEVICES WITH INTERFACIAL CHANNELS
(FR) DISPOSITIFS DE MÉMOIRE À RÉSISTANCE DE COMMUTATION À CANAUX D'INTERFACE
Abstract: front page image
(EN)A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack.
(FR)La présente invention concerne un dispositif de mémoire à résistance de commutation à canal d'interface comprenant un empilement constitué d'une couche d'un premier matériau et d'une couche d'un second matériau. Les couches forment une interface, l'interface comprenant le canal d'interface le long duquel des espèces chargées peuvent se déplacer. Une première électrode vient en contact avec un premier bord de l'empilement, et une seconde électrode vient en contact avec un second bord de l'empilement.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)