WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2015034276) NON-VOLATILE MEMORY AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/034276    International Application No.:    PCT/KR2014/008295
Publication Date: 12.03.2015 International Filing Date: 04.09.2014
IPC:
H01L 27/115 (2006.01), H01L 21/8247 (2006.01)
Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; (Anam-dong 5(o)-ga) 145, Anam-ro Seongbuk-gu Seoul 136-701 (KR)
Inventors: KIM, Tae Geun; (KR).
CHUNG, Ho Young; (KR)
Agent: B&IP-JOOWON PATENT AND LAW FIRM; (Nonhyeon-dong) 9th Floor, Construction Center, Eonju-ro 711 Gangnam-gu Seoul 135-701 (KR)
Priority Data:
10-2013-0106504 05.09.2013 KR
Title (EN) NON-VOLATILE MEMORY AND METHOD FOR MANUFACTURING SAME
(FR) MÉMOIRE NON VOLATILE ET SON PROCÉDÉ DE FABRICATION
(KO) 비휘발성 메모리 및 그 제조 방법
Abstract: front page image
(EN)A non-volatile memory and a method for manufacturing the same are disclosed. The present invention can provide a resistance-variable non-volatile memory device which is made of a resistance-variable material, forms a resistance-variable layer by uniformly arranging a nano-particle having a predetermined diameter on a lower electrode, and forms a conductive filament inside the nano-particle, so that the conductive filament is uniformly formed on the resistance-variable layer, thereby ensuring a higher reliability. Further, the present invention can provide a resistance-variable non-volatile memory device in which a nano-particle having a predetermined diameter is uniformly arranged on a lower electrode and a resistance-variable layer filled with a resistance-variable material is formed therebetween, so that a conductive filament is uniformly formed between the uniformly-arranged nano-particles, thereby ensuring a higher reliability.
(FR)La présente invention concerne une mémoire non volatile et son procédé de fabrication. La présente invention peut pourvoir à un dispositif de mémoire non volatile à résistance variable qui est fait d'un matériau à résistance variable, forme une couche à résistance variable par agencement uniforme de nanoparticules ayant un diamètre prédéterminé sur une électrode inférieure, et forme un filament conducteur à l'intérieur des nanoparticules, de manière que le filament conducteur soit formé uniformément sur la couche à résistance variable, ce qui permet d'assurer une plus haute fiabilité. En outre, la présente invention peut pourvoir à un dispositif de mémoire non volatile à résistance variable dans lequel des nanoparticules ayant un diamètre prédéterminé sont agencées uniformément sur une électrode inférieure et une couche à résistance variable remplie d'un matériau à résistance variable est formée entre elles, de manière qu'un filament conducteur soit formé uniformément entre les nanoparticules agencées uniformément, ce qui permet d'assurer une plus haute fiabilité.
(KO)본 발명은 비휘발성 메모리 및 그 제조 방법을 공개한다. 본 발명은 저항 변화 물질로 형성되고 일정한 직경을 갖는 나노 입자를 하부 전극위에 균일하게 배치하여 저항 변화층을 형성하고, 나노 입자 내부에 전도성 필라멘트를 형성함으로써, 저항 변화층에 균일하게 전도성 필라멘트를 형성하여, 보다 신뢰성 있는 저항 변화 비휘발성 메모리 소자를 제공할 수 있다. 또한, 본 발명은 일정한 직경을 갖는 나노 입자를 하부 전극 위에 균일하게 배치하고 그 사이를 저항 변화 물질로 채운 저항 변화층을 형성함으로써, 전도성 필라멘트를 균일하게 배치된 나노 입자들 사이에 균일하게 형성하여, 보다 신뢰성 있는 저항 변화 비휘발성 메모리 소자를 제공할 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)