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1. (WO2015030457) PLASMA APPARATUS FOR VAPOR PHASE ETCHING AND CLEANING
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/030457 International Application No.: PCT/KR2014/007911
Publication Date: 05.03.2015 International Filing Date: 26.08.2014
IPC:
H01L 21/3065 (2006.01) ,H01L 21/302 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
(주)젠 GEN CO., LTD. [KR/KR]; 경기도 수원시 영통구 신원로 88, 103동 1507호 103-1507 Sinwon-ro, Yeongtong-gu Suwon-si Gyeonggi-do, KR
Inventors:
김호식 KIM, Ho Sick; KR
임홍주 LIM, Hong Ju; KR
김규동 KIM, Kyu Dong; KR
나정균 NA, Jung-kyun; KR
신우곤 SHIN, Woogon; KR
Agent:
특허법인조율 HARMONY PATENT AND LAW FIRM; 서울시 서초구 강남대로 405 통영빌딩 14층 Tongyoung Bldg 14Fl 405, Gangnamdaero Seocho-gu Seoul 137-856, KR
Priority Data:
10-2013-010262528.08.2013KR
10-2014-010950422.08.2014KR
Title (EN) PLASMA APPARATUS FOR VAPOR PHASE ETCHING AND CLEANING
(FR) APPAREIL À PLASMA POUR GRAVURE ET NETTOYAGE EN PHASE GAZEUSE
(KO) 기상식각 및 세정을 위한 플라즈마 장치
Abstract:
(EN) The present invention relates to a plasma apparatus for vapor phase etching and cleaning. The plasma apparatus for vapor phase etching and cleaning of the present invention comprises: a reactor body for treating a substrate to be treated; a direct plasma generation region which is located within the reactor body and in which a process gas flows and plasma is directly induced so as to dissociate the process gas; a plasma inducing assembly for inducing the plasma to the direct plasma generation region; a mixing region which is located within the reactor body and in which the process gas received from the direct plasma generation region is mixed with the vaporized gas received from the outside of the reactor body so as to form reactive species; a first gas distribution baffle which is provided between the direct plasma generation region and the mixing region and has a plurality of first through-holes; a substrate treating region which is located within the substrate treating region and in which the substrate to be treated, is treated by the reactive species received from the mixing region; and a second gas distribution baffle which is provided between the mixing region and the substrate treating region and has a plurality of second through-holes so as to enable the inflow of the reactive species from the mixing region to the substrate treating region. The plasma apparatus for vapor phase etching and cleaning of the present invention can treat the substrate to be treated, without damage due to electrification by forming the reactive species so as to treat the substrate to be treated. In addition, the plasma apparatus for vapor phase etching and cleaning of the present invention does not generate byproducts and has high selectivity when cleaning the substrate to be treated. Also, a surface of the substrate to be treated, can be uniformly treated by uniformly providing the vaporized gas for the vapor phase cleaning. The temperature of the vaporized gas can be adjusted by using a heating wire included in the gas distribution baffle for injecting the vaporized gas. In addition, the substrate to be treated, can be treated in a fine pattern processing step by removing damage due to the electrification. Furthermore, the plasma is uniformly generated by uniformly diffusing the process gas into a chamber through a diffuser plate. The substrate such as a small-sized substrate or a large-sized substrate can be uniformly treated by uniformly generating the large-area plasma. In addition, a diffusion degree of the process gas can be adjusted by adjusting an installation space of the diffuser plate. Also, a gas decomposition rate is increased according to an increase of the duration of the process gas so as to increase the etching amount. Additionally, a substrate fixing type can be selected according to the process atmosphere and environment by further including a hybrid chuck and selectively driving one between an electrostatic type or a vacuum type for supporting the substrate according to the process for treating the substrate. In addition, there is no need for the substrate treating process or exchanging of the chuck during a device failure by selecting the other type and fixing the substrate when one type is not used. Furthermore, productivity is increased and repair cost and production costs are reduced.
(FR) La présente invention porte sur un appareil à plasma pour une gravure et un nettoyage en phase gazeuse. L'appareil à plasma pour une gravure et un nettoyage en phase gazeuse selon la présente invention comprend : un corps de réacteur pour traiter un substrat à traiter; une région de génération de plasma directe qui se trouve à l'intérieur du corps de réacteur et dans laquelle un gaz de traitement circule et un plasma est directement induit afin de dissocier le gaz de traitement; un ensemble d'induction de plasma pour induire le plasma vers la région de génération de plasma directe; une région de mélange qui se trouve à l'intérieur du corps de réacteur et dans laquelle le gaz de traitement reçu en provenance de la région de génération de plasma directe est mélangé avec le gaz vaporisé reçu en provenance de l'extérieur du corps de réacteur afin de former des espèces réactives; un premier déflecteur de distribution de gaz qui est disposé entre la région de génération de plasma directe et la région de mélange et possède une pluralité de premiers trous traversants; une région de traitement de substrat qui se trouve à l'intérieur de la région de traitement de substrat et dans laquelle le substrat à traiter est traité par les espèces réactives reçues en provenance de la région de mélange; et un second déflecteur de distribution de gaz qui est disposé entre la région de mélange et la région de traitement de substrat et possède une pluralité de seconds trous traversants afin de permettre le flux entrant des espèces réactives depuis la région de mélange vers la région de traitement de substrat. L'appareil à plasma pour une gravure et un nettoyage en phase gazeuse selon la présente invention peut traiter le substrat à traiter, sans un endommagement en raison d'une électrification par formation des espèces réactives afin de traiter le substrat à traiter. De plus, l'appareil à plasma pour une gravure et un nettoyage en phase gazeuse selon la présente invention ne génère pas de sous-produits et possède une sélectivité élevée lors du nettoyage du substrat à traiter. Également, une surface du substrat à traiter peut être traitée uniformément par fourniture uniformément du gaz vaporisé pour le nettoyage en phase gazeuse. La température du gaz vaporisé peut être réglée par utilisation d'un fil chauffant inclus dans le déflecteur de distribution de gaz pour injecter le gaz vaporisé. De plus, le substrat à traiter peut être traité dans une étape de traitement à motif fin par suppression d'un endommagement en raison de l'électrification. En outre, le plasma est généré uniformément par diffusion uniformément du gaz de traitement dans une chambre à travers une plaque de diffuseur. Le substrat tel qu'un substrat de petite taille ou un substrat de grande taille peut être traité uniformément par génération uniformément du plasma à grande surface. De plus, un degré de diffusion du gaz de traitement peut être réglé par réglage d'un espace d'installation de la plaque de diffuseur. Également, un taux de décomposition de gaz est augmenté selon une augmentation de la durée du gaz de traitement afin d'augmenter la quantité de gravure. De plus, un type de fixation de substrat peut être sélectionné selon l'atmosphère et l'environnement de traitement par inclusion en outre d'un mandrin hybride et pilotage de manière sélective de l'un entre un type électrostatique et un type sous vide pour porter le substrat selon le processus pour traiter le substrat. De plus, il n'y a pas besoin d'un processus de traitement de substrat ou d'un échange du mandrin durant une défaillance de dispositif par sélection de l'autre type et fixation du substrat lorsqu'un type n'est pas utilisé. En outre, la productivité est augmentée et un coût de réparation et des coûts de fabrication sont réduits.
(KO) 본 발명은 기상식각 및 세정을 위한 플라즈마 장치에 관한 것이다. 본 발명의 기상식각 및 세정을 위한 플라즈마 장치는 피처리 기판을 처리하기 위한 반응기 몸체; 공정 가스가 유입되고 플라즈마가 직접 유도되어 공정 가스를 해리하는 상기 반응기 몸체 내의 직접 플라즈마 발생 영역; 상기 직접 플라즈마 발생 영역으로 플라즈마를 유도하는 플라즈마 유도 어셈블리; 상기 직접 플라즈마 발생 영역으로부터 유입된 공정 가스와 상기 반응기 몸체의 외부에서 유입된 기화 가스가 혼합되어 반응종을 형성하는 반응기 몸체 내의 믹싱 영역; 상기 직접 플라즈마 발생 영역과 상기 믹싱 영역 사이에 구비되며 복수 개의 제1 관통홀을 갖는 제1 가스 분배 배플; 상기 믹싱 영역으로부터 유입된 반응종에 의해 피처리 기판이 처리되는 상기 반응기 몸체 내의 기판 처리 영역; 및 상기 믹싱 영역과 상기 기판 처리 영역 사이에 구비되고, 상기 믹싱 영역에서 상기 기판 처리 영역으로 반응종이 유입될 수 있도록 관통된 복수 개의 제2 관통홀을 갖는 제2 가스 분배 배플을 포함한다. 본 발명의 기상식각 및 세정을 위한 플라즈마 장치에 의하면 반응종을 형성하여 피처리 기판을 처리하는 것으로 대전에 의한 손상이 없이 피처리 기판을 처리할 수 있다. 또한 피처리 기판 세정시 부산물이 발생되하지 않으며 선택비가 높은 장점이 있다. 또한 기상세정을 위한 기화가스를 균일하게 제공함으로써 피처리 기판의 표면을 균일하게 처리할 수 있다. 기화가스를 분사하는 가스 분배 배플에 구비된 열선을 이용하여 기화가스의 온도를 조절할 수 있다. 또한 대전에 의한 손상이 없어 미세 패턴 가공 공정에서도 피처리 기판의 처리가 가능하다. 또한 디퓨저 플레이트를 통해 공정가스가 챔버 내로 균일하게 확산되므로 플라즈마가 균일하게 발생한다. 대면적의 플라즈마를 균일하게 발생시킬 수 있어 소형 기판은 물론 대형 기판을 처리하는 경우에도 기판을 균일하게 처리할 수 있다. 또한 디퓨저 플레이트의 설치 간격을 조절하여 공정가스의 확산 정도를 조절할 수 있다. 또한 공정가스의 존속 시간이 증가되어 가스 분해율을 상승시켜 에치량(Etch amount)이 증가한다. 또한 하이브리드 척이 더 구비되어 기판을 처리하는 공정에 따라 기판을 지지하기 위해 정전방식 또는 진공방식 중 하나를 선택하여 구동할 수 있기 때문에 공정 분위기와 환경에 따라 기판 고정 방식을 선택할 수 있다. 또한 하나의 방식을 사용하지 못하는 경우 다른 방식을 선택하여 기판을 고정할 수 있으므로 고장 시 기판 처리 공정을 중단하거나 척을 교체할 필요가 없다. 또한 생산성이 증가하고 수리비용 및 생산비용이 절감되는 효과를 갖는다.
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)