WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2015029649) N-TYPE SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/029649    International Application No.:    PCT/JP2014/069444
Publication Date: 05.03.2015 International Filing Date: 23.07.2014
IPC:
C30B 29/36 (2006.01), C30B 19/04 (2006.01)
Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA [JP/JP]; 1, Toyotacho, Toyota-shi, Aichi 4718571 (JP)
Inventors: SHIRAI, Takayuki; (JP)
Agent: AOKI, Atsushi; (JP)
Priority Data:
2013-179669 30.08.2013 JP
Title (EN) N-TYPE SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
(FR) MONOCRISTAL SiC DE TYPE N ET SON PROCÉDÉ DE PRODUCTION
(JA) n型SiC単結晶及びその製造方法
Abstract: front page image
(EN)Provided is an n-type SiC single crystal which has a low resistivity and a low threading dislocation density. An n-type SiC single crystal containing germanium and nitrogen, wherein the ratio of the density of germanium to the density of nitrogen (i.e., [Ge/N]) satisfies the relationship represented by the formula: 0.17 < [Ge/N] < 1.60.
(FR)La présente invention concerne un monocristal SiC de type n de faible résistivité et de faible densité de dislocations émergentes. Ledit monocristal SiC de type n contient du germanium et de l'azote, le rapport entre la densité du germanium et la densité de l'azote (c.-à-d. [Ge/N]) satisfaisant à la relation représentée par la formule : 0,17 < [Ge/N] < 1,60.
(JA) 低抵抗率を有し且つ貫通転位密度が小さいn型SiC単結晶を提供する。ゲルマニウム及び窒素を含むn型SiC単結晶であって、ゲルマニウム及び窒素の密度比[Ge/N]が、0.17<[Ge/N]<1.60の関係を満たす、n型SiC単結晶。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)