WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2015029535) SEMICONDUCTOR STRUCTURE IN WHICH FILM INCLUDING GERMANIUM OXIDE IS PROVIDED ON GERMANIUM LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/029535    International Application No.:    PCT/JP2014/065144
Publication Date: 05.03.2015 International Filing Date: 06.06.2014
Chapter 2 Demand Filed:    03.12.2014    
IPC:
H01L 21/316 (2006.01), H01L 21/324 (2006.01), H01L 21/336 (2006.01), H01L 29/78 (2006.01)
Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP/JP]; 1-8, Hon-cho 4-chome, Kawaguchi-shi, Saitama 3320012 (JP)
Inventors: TORIUMI Akira; (JP).
TABATA Toshiyuki; (JP).
LEE Choong Hyun; (JP).
NISHIMURA Tomonori; (JP).
LU Cimang; (JP)
Agent: KATAYAMA Shuhei; Mitsui Sumitomo Marine Tepco Building, 6-1, Kyobashi 1-chome, Chuo-ku, Tokyo 1040031 (JP)
Priority Data:
2013-179912 30.08.2013 JP
2013-195887 20.09.2013 JP
Title (EN) SEMICONDUCTOR STRUCTURE IN WHICH FILM INCLUDING GERMANIUM OXIDE IS PROVIDED ON GERMANIUM LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
(FR) STRUCTURE SEMI-CONDUCTRICE DANS LAQUELLE UNE PELLICULE INCLUANT DE L'OXYDE DE GERMANIUM EST DISPOSÉE SUR UNE COUCHE DE GERMANIUM ET PROCÉDÉ DE FABRICATION DE LA STRUCTURE SEMI-CONDUCTRICE
(JA) ゲルマニウム層上に酸化ゲルマニウムを含む膜を備える半導体構造およびその製造方法
Abstract: front page image
(EN) The present invention is a semiconductor structure provided with a germanium layer (30) and a first insulating film (32) formed on the germanium layer (30), the first insulating film (32) primarily containing germanium oxide and a substance having a lower oxygen potential than that of germanium oxide, the height frequency in 1 μm square of the upper surface of the germanium layer (30) having a half width of 0.7 nm or less. 
(FR) La présente invention concerne une structure semi-conductrice comportant une couche de germanium (30) et une première pellicule isolante (32) formée sur la couche de germanium (30), la première pellicule isolante (32) contenant principalement de l'oxyde de germanium et une substance dont le potentiel d'oxygène est inférieur à celui de l'oxyde de germanium, la fréquence de hauteur dans un carré de 1 μm de la surface supérieure de la couche de germanium (30) ayant une demi-largeur inférieure ou égale à 0,7 nm. 
(JA) 本発明は、ゲルマニウム層30と、前記ゲルマニウム層30の上面に形成され、酸化ゲルマニウムと酸化ゲルマニウムより酸素ポテンシャルが低い物質とを主に含む第1絶縁膜32と、を具備し、前記ゲルマニウム層30の上面の1μm平方内の高さ頻度の半値幅は0.7nm以下である半導体構造である。 
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)