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1. (WO2015029090) PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/029090 International Application No.: PCT/JP2013/005152
Publication Date: 05.03.2015 International Filing Date: 30.08.2013
IPC:
H01L 21/205 (2006.01) ,C23C 16/511 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
511
using microwave discharges
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants: TOHOKU UNIVERSITY[JP/JP]; 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577, JP
Inventors: HIRAYAMA, Masaki; JP
OHMI, Tadahiro; JP
Priority Data:
Title (EN) PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT PAR PLASMA ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置およびプラズマ処理方法
Abstract:
(EN) Provided is a plasma processing device that can generate uniform plasma for a large-scale substrate. The plasma processing device comprises the following: a plurality of dielectrics (10) that are disposed on a shared plane and that have a lower surface; a plurality of wave guides (WG) that propagate microwaves to each of the plurality of dielectrics through openings; and a plurality of microwave supply units (70) that supply microwaves to the plurality of waveguides respectively and that are electrically independent from each other. Each of the plurality of dielectrics is provided with a plurality of gas emission holes (11) for emitting gas from the lower surface of the dielectric. The plurality of dielectrics are formed of first dielectric columns comprising dielectrics arrayed in a first direction (x) and second dielectric columns that comprise the dielectrics arrayed in the first direction and that are disposed adjacent to the first dielectric column in a second direction (y). Dielectrics (10) that form either the first or second dielectric column are disposed so as to be deviated, in the first direction, with respect to dielectrics (10) which form the other of the first or second dielectric column.
(FR) L'invention concerne un dispositif de traitement par plasma qui peut générer un plasma uniforme pour un substrat à grande échelle. Le dispositif de traitement par plasma comprend les éléments suivants : une pluralité de diélectriques (10) qui sont disposés sur un plan partagé et qui ont une surface inférieure ; une pluralité de guides d'ondes (WG) qui propagent des micro-ondes vers chacun de la pluralité de diélectriques par des ouvertures ; et une pluralité d'unités de fourniture de micro-ondes (70) qui fournissent des micro-ondes à la pluralité de guides d'ondes respectivement et qui sont électriquement indépendantes les unes des autres. Chacun de la pluralité de diélectriques comprend une pluralité de trous d'émission de gaz (11) destinés à émettre un gaz à partir de la surface inférieure du diélectrique. La pluralité de diélectriques sont formés de premières colonnes diélectriques comportant des diélectriques placés dans une première direction (x) et de deuxièmes colonnes diélectriques qui contiennent les diélectriques placés dans la première direction et qui sont disposés de façon adjacente à la première colonne diélectrique dans une deuxième direction (y). Les diélectriques (10) qui forment la première ou la deuxième colonne diélectrique sont disposés de manière à être déviés, dans la première direction, par rapport aux diélectriques (10) qui forment l'autre de la première ou de la deuxième colonne diélectrique.
(JA)  大型化した基板に対して、均一なプラズマを発生させることができるプラズマ処理装置を提供する。共通の平面上に配置される下面を有する複数の誘電体(10)と、複数の誘電体の各々に開口部を通じてマイクロ波を伝搬させる複数の導波路(WG)と、複数の導波路へマイクロ波をそれぞれ供給する電気的に互いに独立した複数のマイクロ波供給ユニット(70)とを有し、複数の誘電体の各々は、ガスを下面から放出するための複数のガス放出孔(11)をそれぞれ備え、複数の誘電体は、第1の方向(x)に配列された誘導体からなる第1の誘電体列と、第1の方向に配列された誘導体からなるとともに第2の方向(y)において第1の誘導体列に隣り合わせに配置された第2の誘導体列と、を形成し、第1および第2の誘電体列の一方を形成する誘電体(10)は、他方を形成する誘電体(10)に対して、第1の方向において、偏倚して配置されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)