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1. WO2015010825 - METHOD FOR IMPROVING THE ELECTRICAL CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR LAYERS

Publication Number WO/2015/010825
Publication Date 29.01.2015
International Application No. PCT/EP2014/062120
International Filing Date 11.06.2014
IPC
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/78618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
78618characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Applicants
  • IMEC VZW [BE]/[BE]
  • NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO [NL]/[NL]
  • KATHOLIEKE UNIVERSITEIT LEUVEN [BE]/[BE]
Inventors
  • NAG, Manoj
  • BHOOLOKAM, Ajay Sampath
  • MÜLLER, Johann
Agents
  • BIRD GOËN & CO
Priority Data
13177735.124.07.2013EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR IMPROVING THE ELECTRICAL CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR LAYERS
(FR) PROCÉDÉ POUR AMÉLIORER LA CONDUCTIVITÉ ÉLECTRIQUE DE COUCHES DE SEMI-CONDUCTEUR D’OXYDE MÉTALLIQUE
Abstract
(EN)
The present disclosure provides a method for improving the electrical conductivity of a metal oxide semiconductor layer at predetermined locations. The method comprises: providing on a substrate a metal oxide semiconductor layer; providing by means of Atomic Layer Deposition a metal oxide layer on top of the metal oxide semiconductor layer, wherein the metal oxide layer is in physical contact with the metal oxide semiconductor layer at the predetermined locations. It was surprisingly found that this method results in an increased electrical conductivity of the metal oxide semiconductor layer at the predetermined locations. The method of the present disclosure can advantageously be used in a fabrication process for self-aligned top- gate metal oxide semiconductor thin film transistors, for improving the electrical conductivity in the source and drain regions.
(FR)
La présente invention porte sur un procédé pour améliorer la conductivité électrique d’une couche de semi-conducteur d’oxyde métallique au niveau d'emplacements prédéterminés. Le procédé comprend : la fourniture sur un substrat d’une couche de semi-conducteur d’oxyde métallique ; la fourniture au moyen d’un dépôt de couche atomique d’une couche d’oxyde métallique sur le dessus de la couche de semi-conducteur d’oxyde métallique, la couche d’oxyde métallique étant en contact physique avec la couche de semi-conducteur d’oxyde métallique au niveau des emplacements prédéterminés. Il a été trouvé avec surprise que ce procédé conduit à une conductivité électrique améliorée de la couche de semi-conducteur d’oxyde métallique au niveau des emplacements prédéterminés. Le procédé selon la présente invention peut être avantageusement utilisé dans un processus de fabrication pour des transistors en couches minces à semi-conducteurs d’oxyde métallique à grille supérieure auto-alignée, pour améliorer la conductivité électrique dans les régions de source et drain.
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