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1. WO2015004956 - SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

Publication Number WO/2015/004956
Publication Date 15.01.2015
International Application No. PCT/JP2014/058852
International Filing Date 27.03.2014
IPC
H01L 21/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
B23K 20/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
20Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
B23K 35/14 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
02characterised by mechanical features, e.g. shape
12not specially designed for use as electrodes
14for soldering
CPC
B23K 20/004
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
20Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
002specially adapted for particular articles or work
004Wire welding
B23K 35/3006
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
35Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
22characterised by the composition or nature of the material
24Selection of soldering or welding materials proper
30with the principal constituent melting at less than 1550 degrees C
3006Ag as the principal constituent
C22C 5/06
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
H01L 2224/04026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
04026Bonding areas specifically adapted for layer connectors
H01L 2224/05568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
0556Disposition
05568the whole external layer protruding from the surface
H01L 2224/05639
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05638the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
05639Silver [Ag] as principal constituent
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 山▲崎▼ 浩次 YAMAZAKI Koji
  • 荒木 健 ARAKI Takeshi
Agents
  • 大岩 増雄 OIWA Masuo
Priority Data
2013-14418110.07.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract
(EN)
The purpose of the present invention is to form an intermetallic compound with a high melting point and fewer voids at a joint at which objects are bonded. A semiconductor device (30) according to the present invention is characterized in that the semiconductor device (30) is provided with an alloy layer (13) sandwiched between a first Ag layer (4) formed on a mounting substrate (circuit substrate (12)) and a second Ag layer (10) formed on a semiconductor element (9), and the alloy layer (13) comprises an intermetallic compound of Ag3Sn formed by the Ag component of the first Ag layer (4) and second Ag layer (10) and Sn, and has a plurality of Ag-containing wires (5) disposed therein extending from the outer peripheral side of the alloy layer (13).
(FR)
Le but de la présente invention est de former un composé intermétallique avec un point de fusion élevé et moins de vides au niveau d’un raccord au niveau duquel des objets sont liés. Un dispositif à semi-conducteurs (30) selon la présente invention est caractérisé par le fait que le dispositif à semi-conducteurs (30) comporte une couche d’alliage (13) prise en sandwich entre une première couche Ag (4) formée sur un substrat de montage (substrat de circuit (12)) et une seconde couche Ag (10) formée sur un élément de semi-conducteur (9), et la couche d’alliage (13) comprend un composé intermétallique d'Ag3Sn formé par le constituant Ag de la première couche Ag (4) et de la seconde couche Ag (10) et Sn, et possède une pluralité de films contenant Ag (5) disposés en son sein en s’étendant depuis le côté périphérique externe de la couche d’alliage (13).
(JA)
 接合対象物間が接合された接合部において、ボイドが少ない高融点の金属間化合物を形成することを目的とする。 本発明の半導体装置(30)は、実装基板(回路基板(12))に形成された第1のAg層(4)と、半導体素子(9)に形成された第2のAg層(10)との間に挟持された合金層(13)を備え、合金層(13)は、第1のAg層(4)及び第2のAg層(10)のAg成分と、Snによって形成されたAg3Snの金属間化合物を有し、Agを含んだ複数のワイヤ(5)が当該合金層(13)の外周側から延伸して配置されたことを特徴とする。
Latest bibliographic data on file with the International Bureau