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Machine translation
1. (WO2014209834) METHOD TO PRODUCE PYRITE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/209834    International Application No.:    PCT/US2014/043568
Publication Date: 31.12.2014 International Filing Date: 23.06.2014
IPC:
B82Y 40/00 (2011.01), B05D 5/12 (2006.01), C01G 49/12 (2006.01)
Applicants: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY [US/US]; 1475 North Scottsdale Road, Suite 200 Scottsdale, AZ 85257 (US) (For All Designated States Except US).
NEWMAN, Nathan [US/US]; (US) (US only).
VAHIDI, Mahmoud [IR/US]; (US) (US only).
LEHNER, Stephen [US/US]; (US) (US only).
BUSECK, Peter [US/US]; (US) (US only)
Inventors: NEWMAN, Nathan; (US).
VAHIDI, Mahmoud; (US).
LEHNER, Stephen; (US).
BUSECK, Peter; (US)
Agent: ROCHE, Richard, T.; (US)
Priority Data:
61/838,705 24.06.2013 US
Title (EN) METHOD TO PRODUCE PYRITE
(FR) PROCÉDÉ D'OBTENTION DE PYRITE
Abstract: front page image
(EN)A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single- crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.
(FR)L'invention concerne un procédé qui permet de préparer un dispositif ayant un film sur un substrat. Dans le procédé, un film est déposé sur un substrat. Le film comprend un film mince semi-conducteur, monocristallin ou polycristallin. Le film mince semi-conducteur, monocristallin ou polycristallin, est formé par évaporation séquentielle d'un premier et d'un second élément. Un premier exemple de dispositif préparé par le procédé comprend un substrat de silicium et un film sur le substrat, le film comprenant de la pyrite semi-conductrice, monocristalline ou polycristalline.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)