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Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/209593 International Application No.: PCT/US2014/041656
Publication Date: 31.12.2014 International Filing Date: 10.06.2014
Chapter 2 Demand Filed: 21.04.2015
IPC:
H01L 23/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
Applicants: QUALCOMM INCORPORATED[US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714, US
Inventors: KIM, Daeik D.; US
LAN, Je-Hsiung; US
VELEZ, Mario Francisco; US
ZUO, Chengjie; US
KIM, Jonghae; US
YUN, Changhan; US
Agent: TOLER, Jeffrey G.; 8500 Bluffstone Cove Suite A201 Austin, Texas 78759, US
Priority Data:
13/946,13519.07.2013US
61/838,45124.06.2013US
61/840,70028.06.2013US
61/842,31502.07.2013US
Title (EN) STRESS COMPENSATION PATTERNING
(FR) FORMATION DE MOTIFS ASSURANT UNE COMPENSATION DES CONTRAINTES
Abstract:
(EN) An apparatus includes a device that includes at least one layer. The at least one layer includes an inter-device stress compensation pattern configured to reduce an amount of inter-device warpage prior to the device being detached from another device.
(FR) Un appareil comprend un dispositif qui comprend au moins une couche. L'au moins une couche comprend un motif de compensation des contraintes inter-dispositif configuré pour réduire une quantité de gauchissement inter-dispositif avant que le dispositif soit détaché d'un autre dispositif.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)