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1. (WO2014209390) SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

Pub. No.:    WO/2014/209390    International Application No.:    PCT/US2013/048743
Publication Date: Thu Jan 01 00:59:59 CET 2015 International Filing Date: Sat Jun 29 01:59:59 CEST 2013
IPC: H01L 21/20
Applicants: INTEL CORPORATION
Inventors: GOEL, Niti
DEWEY, Gilbert
METZ, Matthew V.
MUKHERJEE, Niloy
RADOSAVLJEVIC, Marko
CHU-KUNG, Benjamin
KAVALIEROS, Jack T.
CHAU, Robert S.
Title: SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
Abstract:
A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.