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Machine translation
1. (WO2014209332) TUNNELING FIELD EFFECT TRANSISTORS (TFETS) WITH UNDOPED DRAIN UNDERLAP WRAP-AROUND REGIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/209332    International Application No.:    PCT/US2013/048351
Publication Date: 31.12.2014 International Filing Date: 27.06.2013
IPC:
H01L 29/78 (2006.01), H01L 21/336 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, CA 95052 (US)
Inventors: AVCI, Uygar, E.; (US).
KIM, Raseong; (US).
YOUNG, Ian, A.; (US)
Agent: SCHWEIGERT, Jeremy, A.; Blakely, Sokoloff, Taylor & Zafman LLP 1279 Oakmead Parkway Sunnyvale, CA 94085 (US)
Priority Data:
Title (EN) TUNNELING FIELD EFFECT TRANSISTORS (TFETS) WITH UNDOPED DRAIN UNDERLAP WRAP-AROUND REGIONS
(FR) TRANSISTORS À EFFET TUNNEL DE CHAMP (TFETS) COMPORTANT DES RÉGIONS ENROULÉES À RECOUVREMENT NÉGATIF DE PURGE NON DOPÉES
Abstract: front page image
(EN)Tunneling field effect transistors (TFETs) with undoped drain underlap wrap-around regions are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region formed above a substrate. The homojunction active region includes a doped source region, an undoped channel region, a wrapped-around region, and a doped drain region. A gate electrode and gate dielectric layer are formed on the undoped channel region, between the source and wrapped-around regions.
(FR)L'invention concerne des transistors à effet tunnel de champ (TFETS) comportant des régions enroulées à recouvrement négatif de purge non dopées. Par exemple, un transistor à effet de tunnel de champ (TFET) comprend une région active d'homojonction formée au-dessus d'un substrat. La région active d'homojonction comprend une région source dopée, une région de canal non dopée, une région enroulée et une région de purge dopée. Une gâchette et une couche diélectrique de panneau sont formées sur la région de canal non dopée, entre la source et les régions enroulées.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)