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1. (WO2014209030) METHOD FOR MANUFACTURING GRAPHENE USING COVER MEMBER AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/209030    International Application No.:    PCT/KR2014/005677
Publication Date: 31.12.2014 International Filing Date: 26.06.2014
IPC:
C01B 31/02 (2006.01), C23C 16/06 (2006.01), B01J 23/755 (2006.01)
Applicants: CENTER FOR ADVANCED SOFT ELECTRONICS [KR/KR]; 3-dong, RIST, 77, Cheongam-ro, Nam-gu Pohang-si Gyeongsangbuk-do 790-784 (KR)
Inventors: CHO, Kilwon; (KR).
BONG, Hyojin; (KR)
Agent: LEE, Soo Yeol; 4th FL. Artspace Bldg., 13 Banpo-daero 23-gil Seocho-gu Seoul 137-871 (KR)
Priority Data:
10-2013-0074246 27.06.2013 KR
Title (EN) METHOD FOR MANUFACTURING GRAPHENE USING COVER MEMBER AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING SAME
(FR) PROCÉDÉ POUR LA FABRICATION DE GRAPHÈNE UTILISANT UN ÉLÉMENT COUVERCLE ET PROCÉDÉ POUR LA FABRICATION D'ÉLÉMENT ÉLECTRONIQUE COMPRENANT CELUI-CI
(KO) 커버부재를 이용한 그래핀의 제조방법 및 그를 포함하는 전자소자의 제조방법
Abstract: front page image
(EN)One embodiment of the present invention provides graphene and a method for manufacturing the same. The method for manufacturing graphene of the present invention comprises the steps of: (a) forming a metal catalytic layer on a substrate; (b) introducing a cover member on the metal catalytic layer of step a; and (c) growing graphene on the metal catalytic layer of step b by carrying out chemical vapor deposition. Accordingly, it is possible to improve the quality of synthesized graphene such as the transparency thereof by simultaneously promoting the aggregation of metal catalytic molecules in a chemical vapor deposition device and preventing evaporation of a metal catalyst due to the effect of the cover member, and thereby reducing the size of the micro-scale grain boundary on the surface of the metal catalyst. Furthermore, a graphene sheet growing at various concentrations of a carbon source gas can be synthesized and efficiently mass-manufactured in a limited space of the chemical vapor deposition device.
(FR)La présente invention se rapporte, dans un mode de réalisation, à du graphène et à un procédé pour la fabrication de celui-ci. Le procédé pour la fabrication de graphène selon la présente invention comprend les étapes consistant à : (a) former une couche catalytique métallique sur un substrat ; (b) introduire un élément couvercle sur la couche catalytique métallique de l'étape (a) ; et (c) faire croître du graphène sur la couche catalytique métallique de l'étape (b) par la mise en œuvre d'un dépôt chimique en phase vapeur. Par conséquent, il est possible d'améliorer la qualité du graphène synthétisé telle que sa transparence en favorisant l'agrégation de molécules catalytiques métalliques dans un dispositif de dépôt chimique en phase vapeur et en empêchant simultanément l'évaporation d'un catalyseur métallique en raison de l'effet de l'élément couvercle et de cette manière en réduisant la taille du joint de grains à l'échelle micrométrique sur la surface du catalyseur métallique. En outre, une feuille de graphène amenée à croître à diverses concentrations d'un gaz source de carbone peut être synthétisée et fabriquée en masse de façon efficace dans un espace limité du dispositif de dépôt chimique en phase vapeur.
(KO)본 발명의 실시예는 그래핀 및 그의 제조방법을 제공한다. 본 발명의 그래핀의 제조방법은 기재상에 금속 촉매층을 형성하는 단계(단계 a); 단계 a의 금속 촉매층상에 커버 부재를 도입하는 단계(단계 b); 및 화학기상증착을 수행하여 단계 b의 금속 촉매층 상에 그래핀을 성장시키는 단계(단계 c);를 포함한다. 이에 의하여, 화학기상증착 장치 내에서 금속 촉매 분자의 응집을 촉진함과 동시에, 커버 부재의 영향으로 금속 촉매의 기상 증발을 방지함으로써 금속 촉매 표면의 마이크로 단위의 그레인 바운더리(Grain Boundary)의 크기를 줄여 합성된 그래핀의 투명성 등의 퀄리티를 향상시킬 수 있다. 또한, 탄소 원천(source)의 가스의 다양한 농도에서 성장하는 그래핀 시트를 합성할 수 있으며, 화학기상증착 장치 내의 한정된 공간 내에서 효율적으로 대량생산을 할 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)