WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2014208400) METHOD FOR PRODUCING SiC SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/208400    International Application No.:    PCT/JP2014/065996
Publication Date: 31.12.2014 International Filing Date: 17.06.2014
IPC:
H01L 21/304 (2006.01), B24B 37/00 (2012.01), B24B 37/005 (2012.01), B24B 37/08 (2012.01), C09G 1/02 (2006.01), C09K 3/14 (2006.01)
Applicants: SHOWA DENKO K.K. [JP/JP]; 13-9, Shibadaimon 1-chome, Minato-ku, Tokyo 1058518 (JP)
Inventors: SASAKI Yuzo; (JP)
Agent: SHIGA Masatake; (JP)
Priority Data:
2013-131717 24.06.2013 JP
Title (EN) METHOD FOR PRODUCING SiC SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT EN SiC
(JA) SiC基板の製造方法
Abstract: front page image
(EN)This method for producing an SiC substrate comprises at least a CMP step wherein an Si surface (1a) and a C surface (1b) of an SiC substrate (1) are subjected to double side polishing by a Chemical Mechanical Polishing (CMP) method at a C surface/Si surface processing selectivity of 3.0 or more.
(FR)Ce procédé de fabrication d'un substrat en SiC comprend au moins une étape de polissage chimico-mécanique dans lequel une surface de Si (1a) et une surface de C (1b) d'un substrat en SiC (1) sont soumises à un polissage double face par un procédé de polissage chimico-mécanique à une sélectivité de traitement de surface C/Si de 3,0 ou plus.
(JA)SiC基板(1)に備えられるSi面(1a)及びC面(1b)の両面に対し、CMP(Chemical Mechanical Polishing)法により、C面/Si面加工選択比を3.0以上として両面研磨加工を施すCMP工程を少なくとも具備する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)