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1. (WO2014208282) SPUTTERING TARGET, AND METHOD FOR MANUFACTURING THIN FILM USING SAID TARGET
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/208282    International Application No.:    PCT/JP2014/064593
Publication Date: 31.12.2014 International Filing Date: 02.06.2014
IPC:
C23C 14/34 (2006.01), C04B 35/44 (2006.01)
Applicants: ASAHI GLASS COMPANY, LIMITED [JP/JP]; 5-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008405 (JP)
Inventors: ITO, Kazuhiro; (JP).
WATANABE, Satoru; (JP).
MIYAKAWA, Naomichi; (JP).
WATANABE, Toshinari; (JP).
MITSUI, Akira; (JP)
Agent: ITOH, Tadashige; (JP)
Priority Data:
2013-134006 26.06.2013 JP
2013-265587 24.12.2013 JP
Title (EN) SPUTTERING TARGET, AND METHOD FOR MANUFACTURING THIN FILM USING SAID TARGET
(FR) CIBLE DE PULVÉRISATION CATHODIQUE, ET PROCÉDÉ DE FABRICATION DE FILM MINCE UTILISANT LADITE CIBLE
(JA) スパッタリングターゲット及び該ターゲットを用いた薄膜の製造方法
Abstract: front page image
(EN)A sputtering target for forming an amorphous film, which contains an electrically conductive mayenite compound, wherein the electrically conductive mayenite compound has an electron density of 3 × 1020 cm-3 or more and the electrically conductive mayenite compound contains at least one element selected from the group consisting of C, Fe, Na and Zr.
(FR)L'invention concerne une cible de pulvérisation cathodique destinée à former un film amorphe, qui contient un composé mayénite électroconducteur, le composé mayénite électroconducteur ayant une densité électronique de 3 × 1020 cm-3 ou plus et le composé mayénite électroconducteur contenant au moins un élément choisi dans le groupe consistant en C, Fe, Na et Zr.
(JA) 導電性マイエナイト化合物を含むスパッタリングターゲットであって、該導電性マイエナイト化合物の電子密度が3×1020cm-3以上であり、かつ、該導電性マイエナイト化合物は、C、Fe、Na、及びZrからなる群から選択される1種以上の元素を含む非晶質膜形成用スパッタリングターゲット。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)