Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2014208088) REMOVER LIQUID FOR PHOTORESISTS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/208088 International Application No.: PCT/JP2014/003405
Publication Date: 31.12.2014 International Filing Date: 25.06.2014
IPC:
G03F 7/42 (2006.01) ,H01L 21/027 (2006.01) ,H01L 21/304 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
42
Stripping or agents therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors:
淵上 真一郎 FUCHIGAMI, Shinichirou; null
五十嵐 軌雄 IGARASHI, Michio; null
有冨 礼子 ARIDOMI, Ayako; null
小佐野 善秀 KOSANO, Yoshihide; null
鈴木 靖紀 SUZUKI, Yasunori; null
Agent:
廣幸 正樹 HIROKOH, Masaki; JP
Priority Data:
2013-13470827.06.2013JP
Title (EN) REMOVER LIQUID FOR PHOTORESISTS
(FR) LIQUIDE DÉCAPANT POUR PELLICULES PHOTORÉSISTANTES
(JA) フォトレジスト用剥離液
Abstract:
(EN) Provided is a remover liquid for photoresist films, which removes a photoresist film without damaging a Cu film, and which does not decrease adhesion between the Cu film and a layer deposited thereon, said photoresist film having been changed in the properties and having become difficult to remove by being exposed to an etchant for Cu films during wet etching of the Cu film or Cu alloy film on a large-area substrate for the formation of wiring lines or the like. A remover liquid for photoresists, which is characterized by containing 40-60% by mass of water, 1-15% by mass of a tertiary alkanolamine and 25-59% by mass of a polar solvent, or alternatively, by containing more than 60% by mass but 80% by mass or less of water, 1-8% by mass of a tertiary alkanolamine and 12-39% by mass of a polar solvent.
(FR) L'invention concerne un liquide décapant pour pellicules photorésistantes, qui retire une pellicule photorésistante sans endommager une pellicule de Cu, et qui ne réduit pas l'adhésion entre la pellicule de Cu et une couche déposée dessus, les propriétés de ladite pellicule photorésistante ayant été changées et la pellicule étant devenue difficile à retirer en ayant été exposée à un agent de gravure pour pellicules de Cu pendant la gravure par voie humide de la pellicule de Cu ou de la pellicule d'alliage de Cu sur un substrat d'aire large pour la formation de lignes de circuit ou similaires. L'invention pellicules concerne un liquide décapant pour pellicules photorésistantes, lequel est caractérisé en ce qu'il contient entre 40 et 60 % d'eau, entre 1 et 15 % en masse d'un alkanolamine tertiaire et entre 25 et 59 % en masse d'un solvant polaire, ou en variante, en ce qu'il contient plus de 60 % en masse mais 80 % en masse ou moins d'eau, entre 1 et 8 % d'un alkanolamine tertiaire et entre 12 et 39 % en masse d'un solvant polaire.
(JA)  大面積の基板上のCu膜若しくはCu合金膜をウェットエッチングすることによって配線等とする際に、Cu膜用のエッチャントに曝され、変質し剥離しにくくなったフォトレジスト膜をCu膜にダメージを与えないように剥離し、なおかつ、Cu膜の上に堆積させる層との間の接着力を低下させないフォトレジスト膜の剥離液を提供する。 40~60質量%の水と、1~15質量%の三級アルカノールアミンと、25~59質量%の極性溶媒を有する、若しくは、60質量%より多く80質量%以下の水と、1~8質量%の三級アルカノールアミンと、12~39質量%の極性溶媒を有することを特徴とするフォトレジスト用剥離液。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)