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1. (WO2014207988) METHOD FOR MANUFACTURING BONDED WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/207988 International Application No.: PCT/JP2014/002615
Publication Date: 31.12.2014 International Filing Date: 19.05.2014
IPC:
H01L 21/02 (2006.01) ,H01L 21/265 (2006.01) ,H01L 27/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants:
信越半導体株式会社 SHIN-ETSU HANDOTAI CO.,LTD. [JP/JP]; 東京都千代田区大手町二丁目2番1号 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
小林 徳弘 KOBAYASHI, Norihiro; JP
阿賀 浩司 AGA, Hiroji; JP
Agent:
好宮 幹夫 YOSHIMIYA, Mikio; 東京都台東区上野7丁目6番11号第一下谷ビル8F 1st Shitaya Bldg. 8F, 6-11, Ueno 7-chome, Taito-ku, Tokyo 1100005, JP
Priority Data:
2013-13386826.06.2013JP
Title (EN) METHOD FOR MANUFACTURING BONDED WAFER
(FR) PROCÉDÉ DE FABRICATION DE PLAQUETTE LIÉE
(JA) 貼り合わせウェーハの製造方法
Abstract:
(EN)  The present invention is a method for manufacturing a bonded wafer in which a bonded wafer having a thin film on a base wafer is produced by: forming an ion-implanted layer by injecting at least one of hydrogen ions and noble gas ions into the surface of a bond wafer; and, after bonding the ion-implanted surface of the bond wafer and the surface of the base wafer together directly or via an insulating film, applying heat treatment and then separating part of the bond wafer from the ion-implanted layer, wherein the thicknesses of the bond wafer and the base wafer are measured before the bond wafer and the base wafer are bonded together, a combination of the bond wafer and the base wafer in which the difference in the thickness between the two wafers is less than 5 μm is selected, and the selected bond wafer and base wafer are bonded together. A bonded wafer having high uniformity in the thickness of the thin film can thereby be produced by suppressing a marble-pattern irregularity in thickness occurring in the thin film.
(FR) La présente invention concerne un procédé de fabrication d'une plaquette liée, selon lequel une plaquette liée à film mince sur une plaquette de base est obtenue par formation d'une couche à implantation ionique par injection d'au moins un ion parmi des ions d'hydrogène et des ions de gaz noble dans la surface d'une plaquette de liaison; puis lier la surface à implantation ionique de la plaquette de liaison et la surface de la plaquette de base directement ou par l'intermédiaire d'un film isolant, appliquer un traitement thermique et séparer ensuite une partie de la plaquette de liaison de la couche à implantation ionique, l'épaisseur de la plaquette de liaison et de la plaquette de base étant mesurée avant la liaison de la plaquette de liaison et de la plaquette de base, une combinaison de la plaquette de liaison et de la plaquette de base dans laquelle la différence d'épaisseur entre les deux plaquettes est inférieure à 5 μm est sélectionnée, et la plaquette de liaison et la plaquette de base sont liées ensemble. Une plaquette liée présentant une haute uniformité d'épaisseur de film mince peut donc être obtenue par suppression dans l'épaisseur d'une irrégularité de motif marbré apparaissant dans le film mince.
(JA)  本発明は、ボンドウェーハの表面に、水素イオン、希ガスイオンの少なくとも一種類のガスイオンをイオン注入してイオン注入層を形成し、ボンドウェーハのイオン注入した表面と、ベースウェーハの表面とを直接または絶縁膜を介して貼り合わせた後、熱処理を加えてイオン注入層でボンドウェーハの一部を剥離させることにより、ベースウェーハ上に薄膜を有する貼り合わせウェーハを作製する貼り合わせウェーハの製造方法において、ボンドウェーハとベースウェーハを貼り合わせる前に、ボンドウェーハとベースウェーハの厚さを測定し、両ウェーハの厚さの差が5μm未満であるボンドウェーハとベースウェーハとなる組み合わせを選択して貼り合わせる貼り合わせウェーハの製造方法である。これにより、薄膜に発生するマーブル模様の膜厚ムラを抑制し、薄膜の膜厚均一性の高い貼り合わせウェーハを製造できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)