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1. (WO2014206296) SUBSTRATE ETCHING METHOD

Pub. No.:    WO/2014/206296    International Application No.:    PCT/CN2014/080722
Publication Date: Thu Jan 01 00:59:59 CET 2015 International Filing Date: Thu Jun 26 01:59:59 CEST 2014
IPC: C23F 1/12
Applicants: BEIJING NMC CO., LTD.
北京北方微电子基地设备工艺研究中心有限责任公司
Inventors: LI, Chengqiang
李成强
Title: SUBSTRATE ETCHING METHOD
Abstract:
The present invention provides a substrate etching method comprising the following steps: a main etching step, involving introducing etching gas and auxiliary gas into a reaction chamber, and activating an excitation power source and a bias voltage power source, in order to etch the substrate to a preset etching depth, wherein the auxiliary gas includes fluoride gas; an over-etching step, involving introducing the etching gas into the reaction chamber and activating an excitation power source and a bias voltage power source, in order to adjust the trench morphology of the substrate. The present invention provides a substrate etching method which not only increases the flexibility of the process, but also improves the flatness of the substrate at the bottom portion of trenches.