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1. (WO2014206211) BACK-PASSIVATED SOLAR BATTERY AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/206211 International Application No.: PCT/CN2014/079937
Publication Date: 31.12.2014 International Filing Date: 16.06.2014
IPC:
H01L 31/18 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/0224 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
Applicants:
英利集团有限公司 YINGLI GROUP COMPANY LIMITED [CN/CN]; 中国河北省保定 朝阳北大街3399号 No.3399 North Chaoyang Street Baoding, Hebei 071051, CN
英利能源(中国)有限公司 YINGLI ENERGY (CHINA) COMPANY LIMITED [CN/CN]; 中国河北省保定 朝阳北大街3399号 No.3399 North Chaoyang Street Baoding, Hebei 071051, CN
保定嘉盛光电科技有限公司 BAODING JIASHENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. [CN/CN]; 中国河北省保定市 翠园街722号 No.722 Cuiyuan Street Baoding, Hebei 071051, CN
河北流云新能源科技有限公司 HEBEI LIUYUN AMPEREX TECHNOLOGY LIMITED [CN/CN]; 中国河北省保定 朝阳北大街3399号 No.3399 North Chaoyang Street Baoding, Hebei 071051, CN
Inventors:
徐卓 XU, Zhuo; CN
王建明 WANG, Jianming; CN
吴翠姑 WU, Cuigu; CN
史金超 SHI, Jinchao; CN
李高非 LI, Gaofei; CN
胡志岩 HU, Zhiyan; CN
熊景峰 XIONG, Jingfeng; CN
Agent:
北京集佳知识产权代理有限公司 UNITALEN ATTORNEYS AT LAW; 中国北京市 朝阳区建国门外大街22号赛特广场7层 7th Floor, Scitech Place No.22, Jian Guo Men Wai Ave., Chao Yang District Beijing 100004, CN
Priority Data:
201310261117.026.06.2013CN
Title (EN) BACK-PASSIVATED SOLAR BATTERY AND MANUFACTURING METHOD THEREFOR
(FR) BATTERIE SOLAIRE À DOS PASSIVÉ ET PROCÉDÉ POUR SA FABRICATION
(ZH) 背钝化太阳能电池及其制作方法
Abstract:
(EN) A back-passivated solar battery and a manufacturing method therefor. The manufacturing method comprises: after an antireflective film is prepared on a silicon chip, first, forming a back surface field provided with a hollow pattern; then, forming a back-passivated layer; and then, forming a positive electrode. By way of forming the back surface field prior to the back-passivated layer, the step of laser grooving is omitted and the damage of the laser grooving to the silicon chip is avoided. The back surface field is a hollow structure which reduces the contact area with the back-passivated layer and reduces the erosion degree of the back surface field on the back-passivated layer, so as to enable the back-passivated layer to better play a passivating role, thereby reducing the carrier recombination of the back surface of the battery, all of which can ultimately improve the conversion efficiency of the back-passivated solar battery.
(FR) Batterie solaire à dos passivé et procédé pour sa fabrication. Le procédé de fabrication comporte les étapes consistant: après qu'un film antireflet a été préparé sur une pastille en silicium, à former d'abord un champ de surface de dos doté d'un motif en creux; puis à former une couche de passivation de dos; et à former ensuite une électrode positive. En formant le champ de surface de dos avant la couche de passivation de dos, l'étape de rainurage au laser est éliminée et les dégâts occasionnés par le rainurage au laser à la pastille en silicium sont évités. Le champ de surface de dos est une structure creuse qui réduit la surface de contact avec la couche de passivation de dos et réduit le degré d'érosion du champ de surface de dos sur la couche de passivation de dos, de façon à permettre à la couche de passivation de dos de mieux jouer un rôle de passivation, réduisant ainsi la recombinaison de porteurs de la surface de dos de la batterie, tous ces facteurs pouvant finalement améliorer le rendement de conversion de la batterie solaire à dos passivé.
(ZH) 一种背钝化太阳能电池及其制作方法,制作方法包括在硅片制备完减反射膜后,首先形成具有镂空图案的背面场,再形成背钝化层,之后形成正电极,通过使背面场先于背钝化层形成,减少了激光开槽的步骤,避免了激光开槽对硅片的损伤;背面场为镂空结构,与背钝化层的接触面积减少,减轻了背面场对背钝化层的侵蚀程度,使背钝化层能够很好地发挥钝化作用,减少了电池背面的载流子复合,这些最终均能提高背钝化太阳能电池的转换效率。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)