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1. (WO2014206174) METHOD FOR MANUFACTURING NON-PUNCH THROUGH REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR

Pub. No.:    WO/2014/206174    International Application No.:    PCT/CN2014/078790
Publication Date: Thu Jan 01 00:59:59 CET 2015 International Filing Date: Fri May 30 01:59:59 CEST 2014
IPC: H01L 29/739
Applicants: CSMC TECHNOLOGIES FAB1 CO., LTD.
无锡华润上华半导体有限公司
Inventors: HUANG, Xuan
黄璇
DENG, Xiaoshe
邓小社
WANG, Genyi
王根毅
WANG, Wanli
王万礼
Title: METHOD FOR MANUFACTURING NON-PUNCH THROUGH REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR
Abstract:
A method for manufacturing a non-punch through reverse conducting insulated gate bipolar transistor, comprising the following steps: preparing an N-type substrate (100); forming a P+ transmitting region (102) on the N-type substrate (100) by adopting an ion implantation manner; epitaxially preparing an N-type drift region (300) on one surface of the N-type substrate (100) which is provided with the P+ transmitting region (102); preparing a front surface structure of an insulated gate bipolar transistor on the N-type drift region (300); thinning the N-type substrate (100) to expose the P+ transmitting region (102) from the back surface thereof; and forming a metal electrode on the back surface of the N-type substrate (100). The above-mentioned method adopts the combination of an implantation manner with an epitaxial manner to prepare an NPT RC IGBT, so as to be compatible with the conventional silicon wafer technology, and therefore, there is no need for higher requirements of the slice circulation technology, and there is also no need for a dedicated double-sided exposure machine.