Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2014205856) CIRCUIT REPAIR STRUCTURE AND METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/205856 International Application No.: PCT/CN2013/078544
Publication Date: 31.12.2014 International Filing Date: 30.06.2013
IPC:
H01L 23/525 (2006.01) ,H01L 27/12 (2006.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
525
with adaptable interconnections
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No.9-2, Tangming Road, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
徐亮 XU, Liang; CN
Agent:
广东广和律师事务所 GUANGDONG GUANGHE LAW FIRM; 中国广东省深圳市 福田区福虹路世贸广场A座20层 20/F, Block A. World Trade Plaza Fuhong Rd, Futian District Shenzhen, Guangdong 518033, CN
Priority Data:
201310261423.427.06.2013CN
Title (EN) CIRCUIT REPAIR STRUCTURE AND METHOD
(FR) STRUCTURE ET PROCÉDÉ DE RÉPARATION DE CIRCUIT
(ZH) 一种线路修补结构及修补方法
Abstract:
(EN) Embodiments of the present invention disclose a circuit repair structure and method, which are used for repairing a broken circuit formed at an intercrossing position of electric connection wires extending along different directions on a thin film transistor array substrate. The circuit repair structure comprises a repair wire and a protection pattern, and the repair wire extends towards a same side of the electric connection wires at which the broken circuit point is located and is connected to two ends of the broken circuit point. The repair wire penetrates another electric connection wire crossing the electric connection wire at which the broken circuit is located. The protection pattern is disposed between the repair wire and the electric connection wire which the repair wire crosses.
(FR) Des modes de réalisation de la présente invention concernent une structure et un procédé de réparation de circuit qui sont utilisés pour réparer une rupture de circuit formée à l'endroit où s'entrecroisent des fils de raccordement électrique qui s'étendent dans des directions différentes sur un substrat de matrice de transistor à film mince. La structure de réparation de circuit comprend un fil de réparation et un motif de protection, et le fil de réparation s'étend en direction d'un même côté des fils de raccordement électrique où se trouve le point de rupture du circuit et il est raccordé aux deux extrémités du point de rupture du circuit. Le fil de réparation pénètre dans un autre fil de raccordement électrique qui croise le fil de raccordement électrique où se trouve la rupture de circuit. Le motif de protection est disposé entre le fil de réparation et le fil de raccordement électrique que croise le fil de réparation.
(ZH) 本发明实施例公开了一种线路修补结构及修补方法,用于修补薄膜晶体管阵列基板上沿不同方向延伸的电连接线在相互交叉处所形成的断路。所述线路修补结构包括从断路点所在的电连接线朝同一侧延伸而出并连通断路点两端的修补线及保护图案。所述修补线穿过与断路点所在电连接线相交的另一电连接线。所述保护图案设置在修补线与修补线所穿过的电连接线之间。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)