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Machine translation
1. (WO2014204812) REPLACEMENT METAL GATE TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/204812    International Application No.:    PCT/US2014/042358
Publication Date: 24.12.2014 International Filing Date: 13.06.2014
IPC:
H01L 29/78 (2006.01), H01L 21/336 (2006.01)
Applicants: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930 (US)
Inventors: ZHANG, Ying; (US).
SHERMAN, Steven; (US)
Agent: DAISAK, Daniel N.; (US)
Priority Data:
13/921,731 19.06.2013 US
Title (EN) REPLACEMENT METAL GATE TRANSISTOR
(FR) TRANSISTOR À GRILLE MÉTALLIQUE DE REMPLACEMENT
Abstract: front page image
(EN)A replacement metal gate transistor is described. Various examples provide a replacement metal gate transistor including a trench, a first sidewall and a second sidewall. A layer is disposed in the trench where the layer has a bottom section disposed on a bottom of the trench and sidewall sections disposed on the first and second sidewalls, wherein the sidewall sections of the layer are at least 50% thinner than the bottom section of the layer.
(FR)La présente invention concerne un transistor à grille métallique de remplacement. Divers exemples portent sur un transistor à grille métallique de remplacement comprenant une tranchée ainsi que des première et seconde parois latérales. Une couche est disposée dans la tranchée. La couche comporte une section de fond disposée au fond de la tranchée et des sections de parois latérales disposées sur les première et seconde parois latérales. Les sections de parois latérales de la couche sont au moins 50 % plus fines que la section de fond de la couche.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)