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1. WO2014204748 - OPTOELECTRONIC INTEGRATED CIRCUIT

Publication Number WO/2014/204748
Publication Date 24.12.2014
International Application No. PCT/US2014/041920
International Filing Date 11.06.2014
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
15
Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/15 (2006.01)
CPC
B82Y 10/00
G02B 6/125
H01L 21/0259
H01L 27/144
H01L 27/15
H01L 29/0665
Applicants
  • OPEL SOLAR, INC. [US/US]; P.O. Box 555 Storrs Mansfield, CT 06268, US
  • THE UNIVERSITY OF CONNECTICUT [US/US]; Technology Partnerships & Licensing 265 Farmington Avenue, MC 6400 Farmington, CT 06030-6400, US
Inventors
  • TAYLOR, Geoff, W.; US
Agents
  • GORDON, David; US
Priority Data
13/921,31119.06.2013US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) OPTOELECTRONIC INTEGRATED CIRCUIT
(FR) CIRCUIT INTÉGRÉ OPTO-ÉLECTRONIQUE
Abstract
(EN)
A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure.
(FR)
L'invention porte sur un dispositif à semiconducteurs comportant un substrat surmontés d'une pluralité de couches qui comprennent au moins une structure de puits quantique (QW) dopée à modulation décalée par rapport à une structure de points quantiques dans des puits quantiques (QD-in-QW). La structure de puits quantique dopée à modulation comprend une feuille de charge espacée d'au moins un puits quantique par une couche d'espacement. La structure QD-in-QW a des QD incorporés dans un ou plusieurs QW. La QD-in-QW peut comprendre au moins une paire de sous-structures de gabarit/émission séparées par une couche de barrière, la sous-structure de gabarit ayant des QD de plus petite taille que la sous-structure d'émission.
Also published as
Latest bibliographic data on file with the International Bureau