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1. (WO2014203842) HIGH-PURITY 1-FLUOROBUTANE AND PLASMA ETCHING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/203842 International Application No.: PCT/JP2014/065847
Publication Date: 24.12.2014 International Filing Date: 16.06.2014
IPC:
C07C 19/08 (2006.01) ,C07C 17/383 (2006.01) ,C07C 17/389 (2006.01) ,H01L 21/3065 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
19
Acyclic saturated compounds containing halogen atoms
08
containing fluorine
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
17
Preparation of halogenated hydrocarbons
38
Separation; Purification; Stabilisation; Use of additives
383
by distillation
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
17
Preparation of halogenated hydrocarbons
38
Separation; Purification; Stabilisation; Use of additives
389
by adsorption on solids
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants: ZEON CORPORATION[JP/JP]; 6-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008246, JP
Inventors: SUGIMOTO Tatsuya; JP
Agent: OHISHI Haruhito; JP
Priority Data:
2013-12624017.06.2013JP
Title (EN) HIGH-PURITY 1-FLUOROBUTANE AND PLASMA ETCHING METHOD
(FR) 1-FLUOROBUTANE DE PURETÉ ÉLEVÉE ET PROCÉDÉ DE GRAVURE AU PLASMA
(JA) 高純度1-フルオロブタン及びプラズマエッチング方法
Abstract:
(EN) The present invention provides: high-purity 1-fluorobutane characterized by having a purity of 99.9% by vol or more and containing butene compounds in the total amount of 1000 ppm by volume or less; the use of the high-purity 1-fluorobutane as a dry etching gas; and a plasma etching method using the high-purity 1-fluorobutane as an etching gas. According to the present invention, high-purity 1-fluorobutane which is suitable as a plasma reaction gas for semiconductors, the use of the high-purity 1-fluorobutane as a dry etching gas, and a plasma etching method using the high-purity 1-fluorobutane as an etching gas are provided.
(FR) La présente invention concerne : du 1-fluorobutane de pureté élevée caractérisé en ce qu'il présente une pureté supérieure ou égale à 99,9 % en volume et qu'il contient des composés butène en une proportion totale inférieure ou égale à 1 000 ppm en volume ; l'utilisation dudit 1-fluorobutane de pureté élevée comme gaz de gravure à sec ; et un procédé de gravure au plasma faisant appel au dit 1-fluorobutane de pureté élevée comme gaz de gravure. Selon la présente invention, celle-ci concerne du 1-fluorobutane de pureté élevée qui est approprié comme gaz de réaction au plasma pour semi-conducteurs, l'utilisation dudit 1-fluorobutane de pureté élevée comme gaz de gravure à sec, et un procédé de gravure au plasma faisant appel au dit 1-fluorobutane de pureté élevée comme gaz de gravure.
(JA)  本発明は、純度が99.9容量%以上、ブテン類が合計で1000容量ppm以下であることを特徴とする高純度1-フルオロブタン、このもののドライエッチングガスとしての使用、及び、前記高純度1-フルオロブタンをエッチングガスとして用いるプラズマエッチング方法である。 本発明によれば、半導体向けのプラズマ反応用ガスとして好適な高純度1-フルオロブタン、このもののドライエッチングガスとしての使用、及び、前記高純度1-フルオロブタンをエッチングガスとして用いるプラズマエッチング方法が提供される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)