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1. (WO2014203623) Ga2O3 SEMICONDUCTOR ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/203623 International Application No.: PCT/JP2014/061798
Publication Date: 24.12.2014 International Filing Date: 25.04.2014
IPC:
H01L 21/336 (2006.01) ,H01L 21/28 (2006.01) ,H01L 29/78 (2006.01) ,H01L 29/786 (2006.01)
Applicants: TAMURA CORPORATION[JP/JP]; 1-19-43, Higashi-Oizumi, Nerima-ku, Tokyo 1788511, JP
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY[JP/JP]; 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo 1848795, JP
Inventors: SASAKI, Kohei; JP
HIGASHIWAKI, Masataka; JP
Agent: HIRATA, Tadao; Hirata & Partners, 29th Floor, Shinjuku Front Tower, 2-21-1, Kitashinjuku, Shinjuku-ku, Tokyo 1690074, JP
Priority Data:
2013-12684917.06.2013JP
Title (EN) Ga2O3 SEMICONDUCTOR ELEMENT
(FR) ÉLÉMENT SEMI-CONDUCTEUR Ga2O3
(JA) Ga2O3系半導体素子
Abstract: front page image
(EN) Provided is a Ga2O3 semiconductor element having less leak current and a large on/off ratio. In one embodiment, provided is a Ga2O3 MISFET (10) having: a β-Ga2O3 monocrystalline layer (3) formed on a high-resistance β-Ga2O3 substrate (2); a source electrode (12) and drain electrode (13) formed on the β-Ga2O3 monocrystalline layer (3); a gate electrode (11) formed between the source electrode (12) and drain electrode (13) on the β-Ga2O3 monocrystalline layer (3); and an insulating film (16) that has an oxide insulator as the primary component and that covers the surface of the β-Ga2O3 monocrystalline layer (3) at the region between the drain electrode (13) and the gate electrode (11) and the region between the gate electrode (11)and the source electrode (12).
(FR) L'invention concerne un élément semi-conducteur Ga2O3 ayant moins de courant de fuite et un rapport marche/arrêt élevé. Dans un mode de réalisation, l'invention concerne un MISFET Ga2O3 ayant : une couche monocristalline β-Ga2O3 (3) formée sur un substrat à haute résistance β-Ga2O3 (2); une électrode source (12) et une électrode drain (13) formées sur la couche monocristalline β-Ga2O3 (3); une électrode grille (11) formée entre l'électrode source (12) et l'électrode drain (13) sur la couche monocristalline β-Ga2O3 (3); et un film isolant (16) qui a un isolateur d'oxyde en tant que composant primaire et qui recouvre la surface de la couche monocristalline β-Ga2O3 (3) dans la zone située entre l'électrode drain (13) et l'électrode grille (11) et dans la zone située entre l'électrode grille (11) et l'électrode source (12).
(JA)  よりリーク電流が小さく、オンオフ比が大きいGa23系半導体素子を提供する。 一実施の形態として、高抵抗β-Ga23基板2上に形成されたβ-Ga23単結晶層3と、β-Ga23単結晶層3上に形成されたソース電極12及びドレイン電極13と、β-Ga23単結晶層3上のソース電極12とドレイン電極13との間に形成されたゲート電極11と、β-Ga23単結晶層3の表面のソース電極12とゲート電極11との間の領域及びゲート電極11とドレイン電極13との間の領域を覆う、酸化物絶縁体を主成分とする絶縁膜16と、を有するGa23系MISFET10を提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)