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1. (WO2014202679) SEMICONDUCTOR MATERIAL INCLUDING AREAS HAVING DIFFERENT CRYSTALLINE ORIENTATIONS AND ASSOCIATED PRODUCTION METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/202679 International Application No.: PCT/EP2014/062847
Publication Date: 24.12.2014 International Filing Date: 18.06.2014
IPC:
H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
SAINT-GOBAIN LUMILOG [FR/FR]; Les Miroirs 18, avenue d'Alsace F-92400 Courbevoie, FR
Inventors:
FAURIE, Jean-Pierre; FR
BEAUMONT, Bernard; FR
Agent:
REGIMBEAU; 139 rue Vendôme F-69477 Lyon Cedex 06, FR
Priority Data:
135567718.06.2013FR
Title (EN) SEMICONDUCTOR MATERIAL INCLUDING AREAS HAVING DIFFERENT CRYSTALLINE ORIENTATIONS AND ASSOCIATED PRODUCTION METHOD
(FR) MATERIAU SEMI-CONDUCTEUR INCLUANT DES ZONES D'ORIENTATIONS CRISTALLINES DIFFERENTES ET PROCEDE DE REALISATION ASSOCIE
Abstract:
(EN) The invention relates to a method for producing a semiconductor material made of group-III nitride from a starting substrate, the method including: the formation (500) of a silicon intermediate layer (30) on a starting substrate, said intermediate layer comprising at least two adjacent areas having different crystalline orientations (31, 32), in particular a monocrystalline area (32) and an amorphous or polycrystalline area (31); the epitaxial growth of a layer of group-III nitride on said intermediate layer, the intermediate layer being intended for being spontaneously vaporized during the step which involves causing the epitaxial growth of the layer of group-III nitride.
(FR) L'invention concerne un procédé de fabrication d'un matériau semi-conducteur de nitrure d'élément III à partir d'un substrat de départ, le procédé comprenant: -la formation (500) une couche intermédiaire à base de silicium (30) sur un substrat de départ, ladite couche intermédiaire comportant au moins deux zones adjacentes d'orientations cristallines différentes (31, 32), notamment une zone monocristalline (32) et une zone amorphe ou poly-cristalline (31), -la croissance par épitaxie d'une couche de nitrure d'élément III sur ladite couche intermédiaire, la couche intermédiaire étant destinée à être vaporisée spontanément lors de l'étape consistant à faire croître par épitaxie la couche de nitrure d'élément III.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)