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1. (WO2014201716) CHANNEL FORMING METHOD FOR THIN-FILM TRANSISTOR AND COMPENSATION CIRCUIT

Pub. No.:    WO/2014/201716    International Application No.:    PCT/CN2013/078228
Publication Date: Thu Dec 25 00:59:59 CET 2014 International Filing Date: Fri Jun 28 01:59:59 CEST 2013
IPC: H01L 21/324
H01L 21/336
G02F 1/136
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: HSU, Tsung-Yi
许宗义
Title: CHANNEL FORMING METHOD FOR THIN-FILM TRANSISTOR AND COMPENSATION CIRCUIT
Abstract:
The present invention subjects amorphous silicon layers on a substrate to an etching treatment to form an amorphous silicon pattern comprising multiple amorphous silicon layers. The amorphous silicon layers are provided with a flexed structure. Two disconnecting spaces respectively are formed at adjacent flexed parts of each amorphous silicon layer. A laser is irradiated to allow crystallites in the amorphous silicon layers located at the two sides of each disconnecting space to grow towards the direction of corresponding disconnecting spaces under the effect of a temperature difference and to crystallize within the disconnecting spaces to form channels of a thin-film transistor.