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1. (WO2014200190) OXIDE SEMICONDUCTOR TRANSISTOR USED AS PIXEL ELEMENT OF DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/200190 International Application No.: PCT/KR2014/004232
Publication Date: 18.12.2014 International Filing Date: 12.05.2014
IPC:
H01L 29/786 (2006.01) ,H01L 21/335 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
Applicants:
경희대학교 산학협력단 UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY [KR/KR]; 경기도 용인시 기흥구 덕영대로 1732, 국제캠퍼스 International campus, 1732, Deogyeong-daero, Giheung-gu Yongin-si Gyeonggi-do 446-701, KR
Inventors:
장진 JANG, Jin; KR
석만주 SEOK, Man Ju; KR
엄재광 UM, Jae Gwang; KR
이수희 LEE, Su Hui; KR
Agent:
송인호 SONG, In-Ho; 서울시 강남구 강남대로62길 38(역삼동, 동림빌딩 5층) (Yeoksam-dong, Donglim bldg., 5th floor), 38, Gangnam-daero 62-gil Gangnam-gu Seoul 135-935, KR
Priority Data:
10-2013-006669311.06.2013KR
10-2013-015342110.12.2013KR
Title (EN) OXIDE SEMICONDUCTOR TRANSISTOR USED AS PIXEL ELEMENT OF DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) TRANSISTOR SEMI-CONDUCTEUR D'OXYDE SERVANT D'ÉLÉMENT DE PIXEL D'UN DISPOSITIF D'AFFICHAGE ET SON PROCÉDÉ DE FABRICATION
(KO) 디스플레이 장치의 화소 소자로 사용되는 산화물 반도체 트랜지스터 및 이의 제조 방법
Abstract:
(EN) An oxide semiconductor transistor used as a pixel element of a display device, and a manufacturing method therefor are disclosed. The disclosed oxide semiconductor transistor is an oxide semiconductor transistor used as a pixel element of a display device, comprising: a substrate; a first gate electrode located on the substrate; source and drain electrodes located on the first gate electrode; and a second gate electrode located on the source and drain electrodes, wherein the first gate electrode and the second gate electrode are electrically connected so as to have a same voltage applied thereto, and the width of the second gate electrode is narrower than the width between the source and drain electrodes.
(FR) L'invention concerne un transistor semi-conducteur d'oxyde servant d'élément de pixel d'un dispositif d'affichage et son procédé de fabrication. Le transistor semi-conducteur d'oxyde selon l'invention est un transistor semi-conducteur d'oxyde servant d'élément de pixel d'un dispositif d'affichage, comprenant : un substrat; une première électrode de grille située sur le substrat; des électrodes de source et de drain situées sur la première électrode de grille; et une seconde électrode de grille située sur les électrodes de source et de drain, la première électrode de grille et la seconde électrode de grille étant électriquement connectées de sorte que la même tension leur soit appliquée, et la largeur de la seconde électrode de grille étant plus étroite que la largeur entre les électrodes de source et de drain.
(KO) 디스플레이 장치의 화소 소자로 사용되는 산화물 반도체 트랜지스터 및 이의 제조 방법이 개시된다. 개시된 산화물 반도체 트랜지스터는 디스플레이 장치의 화소 소자로 사용되는 산화물 반도체 트랜지스터에 있어서, 기판; 상기 기판 위에 위치하는 제1 게이트 전극; 상기 제1 게이트 전극 위에 위치하는 소스 전극 및 드레인 전극; 및 상기 소스 전극 및 상기 드레인 전극 위에 위치하는 제2 게이트 전극;을 포함하되, 상기 제1 게이트 전극과 상기 제2 게이트 전극은 전기적으로 연결되어 동일한 전압을 인가받고, 상기 제2 게이트 전극의 폭은 상기 소스 전극과 상기 드레인 전극 사이의 폭 보다 짧은 것을 특징으로 한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)