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1. (WO2014199851) SEMICONDUCTOR LIGHT-EMITTING DEVICE

Pub. No.:    WO/2014/199851    International Application No.:    PCT/JP2014/064575
Publication Date: Fri Dec 19 00:59:59 CET 2014 International Filing Date: Tue Jun 03 01:59:59 CEST 2014
IPC: H01L 33/22
H01L 33/50
H01L 33/58
Applicants: ASAHI KASEI E-MATERIALS CORPORATION
旭化成イーマテリアルズ株式会社
Inventors: YAMAGUCHI, Fujito
山口 布士人
SHIROKURA, Nao
白倉 奈央
Title: SEMICONDUCTOR LIGHT-EMITTING DEVICE
Abstract:
A semiconductor light-emitting device constituted by: a semiconductor light-emitting element (100) emitting a first light, having a layered semiconductor layer (110) constituted by layering at least two or more semiconductor layers (103) (105) and a light-emitting layer (104); and a wavelength conversion member covering at least a portion of the semiconductor light-emitting element (100), absorbing at least a portion of the first light and emitting a second light having a wavelength different from the first light. The device is characterized in that, as a constitutive element on any of the main planes constituting the semiconductor light-emitting element (100), the semiconductor light-emitting element (100) is provided with a microstructural layer containing dots constituted from a plurality of depressions or protrusions extending outward from the plane, the microstructural layer constituting a two-dimensional photonic crystal (102) defined by any of at least the pitch between the dots, the dot diameter or the dot height, the two-dimensional photonic crystal (102) having at least two or more periods of 1 μm or greater each.