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1. (WO2014199608) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2014/199608    International Application No.:    PCT/JP2014/003022
Publication Date: Fri Dec 19 00:59:59 CET 2014 International Filing Date: Sat Jun 07 01:59:59 CEST 2014
IPC: H01L 27/08
H01L 21/336
H01L 21/764
H01L 21/822
H01L 21/8234
H01L 27/04
H01L 27/06
H01L 29/78
H01L 29/861
H01L 29/868
Applicants: FUJI ELECTRIC CO.,LTD.
富士電機株式会社
Inventors: YAMAJI, Masaharu
山路 将晴
Title: SEMICONDUCTOR DEVICE
Abstract:
In a semiconductor device (100) having a boot strap diode (Db) and a high withstand voltage field effect transistor (62) on a p type semiconductor substrate (1), a hollow (3) is formed in an n- type embedding layer (50) of the semiconductor substrate (1), and the embedding layer (50) under the hollow is used as a drain drift region of a high withstand voltage n channel MOSFET (62). Consequently, a leak current due to holes (92) flowing to the semiconductor substrate (1) side when the boot strap diode (Db) is forward-biased is suppressed, and at the same time, a charging current of a boot strap capacitor (C1) is increased, and an increase of a chip area can be suppressed.