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|1. (WO2014199608) SEMICONDUCTOR DEVICE|
|Applicants:||FUJI ELECTRIC CO.,LTD.
In a semiconductor device (100) having a boot strap diode (Db) and a high withstand voltage field effect transistor (62) on a p type semiconductor substrate (1), a hollow (3) is formed in an n- type embedding layer (50) of the semiconductor substrate (1), and the embedding layer (50) under the hollow is used as a drain drift region of a high withstand voltage n channel MOSFET (62). Consequently, a leak current due to holes (92) flowing to the semiconductor substrate (1) side when the boot strap diode (Db) is forward-biased is suppressed, and at the same time, a charging current of a boot strap capacitor (C1) is increased, and an increase of a chip area can be suppressed.