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1. (WO2014199510) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/199510 International Application No.: PCT/JP2013/066453
Publication Date: 18.12.2014 International Filing Date: 14.06.2013
Chapter 2 Demand Filed: 29.11.2013
IPC:
H01L 21/28 (2006.01) ,H01L 21/268 (2006.01) ,H01L 21/329 (2006.01) ,H01L 29/47 (2006.01) ,H01L 29/872 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
329
the devices comprising one or two electrodes, e.g. diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
47
Schottky barrier electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
872
Schottky diodes
Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.[JP/JP]; 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors: FUKUDA Yusuke; JP
Agent: KATSUNUMA Hirohito; Kyowa Patent & Law Office, Nippon Life Marunouchi Building, Marunouchi 1-6-6, Chiyoda-ku, Tokyo 1000005, JP
Priority Data:
Title (EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR ET DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置の製造方法および半導体装置
Abstract:
(EN) This method for manufacturing a semiconductor device comprises the steps of: forming a semiconductor layer upon a first main surface of a semiconductor substrate comprising a crystal having a wide bandgap; generating lattice defects on a second main surface side of the semiconductor substrate opposite from the first main surface; subsequent to the step of generating the lattice defects, irradiating the lower surface of the semiconductor substrate with laser light of a wavelength longer than the absorption edge wavelength, which is the wavelength of light of the lowest energy absorbed by the crystal; and subsequent to the step of irradiation, forming an electrode on the second main surface of the semiconductor substrate.
(FR) Les étapes du procédé de fabrication d'un dispositif semi-conducteur selon la présente invention consistent : à former une couche semi-conductrice sur une première surface principale d'un substrat semi-conducteur comprenant un cristal ayant une large bande interdite ; à générer des défauts de réseau cristallin du côté d'une seconde surface principale du substrat semi-conducteur opposé à la première surface principale ; après l'étape consistant à générer les défauts de réseau cristallin, à irradier la surface inférieure du substrat semi-conducteur avec une lumière laser d'une longueur d'onde supérieure à la longueur d'onde de bord d'absorption, laquelle est la longueur d'onde de lumière d'énergie la plus basse absorbée par le cristal ; et après l'étape d'irradiation, à former une électrode sur la seconde surface principale du substrat semi-conducteur.
(JA)  半導体装置の製造方法は、ワイドバンドギャップを有する結晶からなる半導体基板の第1主面上に半導体層を形成する工程と、半導体基板の第1主面とは反対の第2主面側に格子欠陥を生じさせる工程と、格子欠陥を生じさせる工程の後に、上記結晶が吸収する最も低いエネルギーの光の波長である吸収端波長より長い波長のレーザ光を半導体基板の下面に照射する工程と、照射する工程の後に、上記半導体基板の第2主面に電極を形成する工程と、を有する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)