Search International and National Patent Collections

1. (WO2014199465) SEMICONDUCTOR APPARATUS

Pub. No.:    WO/2014/199465    International Application No.:    PCT/JP2013/066228
Publication Date: Fri Dec 19 00:59:59 CET 2014 International Filing Date: Thu Jun 13 01:59:59 CEST 2013
IPC: H01L 29/861
H01L 29/739
H01L 29/78
H01L 29/868
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: MASUOKA, Fumihito
増岡 史仁
NAKAMURA, Katsumi
中村 勝光
NISHII, Akito
西井 昭人
Title: SEMICONDUCTOR APPARATUS
Abstract:
 A p-type anode layer (2) is provided on the upper surface of an n-type drift layer (1). A n-type cathode layer (3) is provided on the lower surface of an n -type drift layer (1). An n-type buffer layer (4) is provided between the n- type drift layer (1) and the n-type cathode layer (3). The peak concentration of the n-type buffer layer (4) is higher than that of the n-type drift layer (1) and lower than that of the n-type cathode layer (3). The gradient of the carrier concentration at the section where the n-type drift layer (1) and the n-type buffer layer (4) are connected is 20-2000–4.