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1. (WO2014199433) SEMICONDUCTOR-DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

Pub. No.:    WO/2014/199433    International Application No.:    PCT/JP2013/065998
Publication Date: Fri Dec 19 00:59:59 CET 2014 International Filing Date: Tue Jun 11 01:59:59 CEST 2013
IPC: H01L 21/336
H01L 29/78
Applicants: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
ユニサンティス エレクトロニクス シンガポール プライベート リミテッド
MASUOKA Fujio
舛岡 富士雄
NAKAMURA Hiroki
中村 広記
Inventors: MASUOKA Fujio
舛岡 富士雄
NAKAMURA Hiroki
中村 広記
Title: SEMICONDUCTOR-DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
Abstract:
This invention addresses the problem of providing the following: an SGT manufacturing method, said SGT manufacturing method being a gate-last process in which two masks are used to form a fin-shaped semiconductor layer, a columnar semiconductor layer, a gate electrode, and gate wiring; and an SGT structure obtained thereby. Said problem is solved via the following steps: a first step in which a fin-shaped semiconductor layer is formed on top of a semiconductor substrate and a first insulating film is formed around said fin-shaped semiconductor layer; and a second step, after said first step, in which a second insulating film is formed around the fin-shaped semiconductor layer, first polysilicon is deposited on top of said second insulating film and planarized, a second resist for forming gate wiring and a columnar semiconductor layer is formed in a direction that is perpendicular to the direction of the fin-shaped semiconductor layer, and the first polysilicon, the second insulating film, and the fin-shaped semiconductor layer are etched to form a first dummy gate from the columnar semiconductor layer and the first polysilicon.