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1. (WO2014198550) METHOD FOR PRODUCING A NITRIDE COMPOUND SEMICONDUCTOR COMPONENT

Pub. No.:    WO/2014/198550    International Application No.:    PCT/EP2014/061139
Publication Date: Fri Dec 19 00:59:59 CET 2014 International Filing Date: Thu May 29 01:59:59 CEST 2014
IPC: H01L 21/20
Applicants: OSRAM OPTO SEMICONDUCTORS GMBH
Inventors: BERGBAUER, Werner
DRECHSEL, Philipp
STAUSS, Peter
RODE, Patrick
Title: METHOD FOR PRODUCING A NITRIDE COMPOUND SEMICONDUCTOR COMPONENT
Abstract:
The invention relates to a method for producing a nitride compound semiconductor component, having the steps: - providing a growth substrate (1) having a silicon surface; - growing a buffer layer (2) having AlxInyGa1-x-yN with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y ≤ 1 on the silicon surface; - growing a semiconductor layer sequence (3) on the buffer layer (2), wherein - the buffer layer (2) has a material composition varying in such a manner that a lateral lattice constant of the buffer layer (2) in a first region (2a) increases stepwise or continuously, and in a second region (2b), which follows the first region in the growth direction, decreases stepwise or continuously; and - the buffer layer (2) has a smaller lateral lattice constant at an interface with the semiconductor layer sequence (3) than a semiconductor layer (4) of the semiconductor layer sequence (3) adjoining the buffer layer (2).