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1. (WO2014197802) TRENCH SHIELD CONNECTED JFET
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/197802 International Application No.: PCT/US2014/041312
Publication Date: 11.12.2014 International Filing Date: 06.06.2014
IPC:
H01L 29/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
Applicants:
UNITED SILICON CARBIDE, INC. [US/US]; 7 Deer Park Drive Suite E Monmouth Junction, NJ 08852, US
Inventors:
BHALLA, Anup; US
ALEXANDROV, Peter; US
Agent:
ROSEDALE, Jeffrey, H.; Baker & Hostetler LLP Cira Centre, 12th Floor 2929 Arch Street Philadelphia, PA 19104, US
Priority Data:
61/831,90606.06.2013US
61/833,21710.06.2013US
Title (EN) TRENCH SHIELD CONNECTED JFET
(FR) JFET CONNECTÉ À BLINDAGE DE TRANCHÉE
Abstract:
(EN) A shielded junction field effect transistor (JFET) is described having gate trenches and shield trenches, the shield trenches being deeper and narrower than the gate trenches. The gate trenches may be fully aligned, partially aligned, or separated from the shield trenches.
(FR) L'invention concerne un transistor à effet de champ à jonction (JFET) blindé présentant des tranchées de grille et des tranchées de blindage, les tranchées de blindage étant plus profondes et plus étroites que les tranchées de grille. Les tranchées de grille peuvent être totalement alignées, partiellement alignées ou séparées des tranchées de blindage.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)