Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2014197661) COPPER-ALLOY BARRIER LAYERS AND CAPPING LAYERS FOR METALLIZATION IN ELECTRONIC DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/197661 International Application No.: PCT/US2014/041026
Publication Date: 11.12.2014 International Filing Date: 05.06.2014
IPC:
H01L 29/786 (2006.01) ,H01L 21/335 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
Applicants:
H.C. STARCK INC. [US/US]; 45 Industrial Place Newton, MA 02461, US
Inventors:
SUN, Shuwei; US
FRANCOIS-CHARLES, Dary; US
ABOUAF, Marc; US
HOGAN, Patrick; US
ZHANG, Qi; US
Agent:
CURRIE, Matthew T.; US
Priority Data:
61/831,86506.06.2013US
Title (EN) COPPER-ALLOY BARRIER LAYERS AND CAPPING LAYERS FOR METALLIZATION IN ELECTRONIC DEVICES
(FR) COUCHES BARRIÈRE D'ALLIAGE DE CUIVRE ET COUCHES DE COIFFAGE POUR MÉTALLISATION DANS DES DISPOSITIFS ÉLECTRONIQUES
Abstract:
(EN) In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate electrodes and/or interconnects featuring a conductor layer and, disposed above or below the conductor layer, a capping layer and/or a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.
(FR) L'invention concerne, dans divers modes de réalisation, des dispositifs électroniques tels que transistors à films minces et/ou des afficheurs à panneau tactile incorporant des électrodes et/ou interconnexions comportant une couche de conducteur et, disposée au-dessus ou au-dessous de la couche de conducteur, une couche de coiffage et/ou une couche barrière comprenant un alliage de Cu et un ou plusieurs éléments de métal réfractaire choisis dans le groupe constitué de Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr et Ni.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)