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1. (WO2014197523) 3D NON-VOLATILE MEMORY WITH CONTROL GATE LENGTH BASED ON MEMORY HOLE DIAMETER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/197523 International Application No.: PCT/US2014/040775
Publication Date: 11.12.2014 International Filing Date: 04.06.2014
IPC:
H01L 27/115 (2006.01) ,G11C 16/04 (2006.01) ,G11C 16/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
04
using variable threshold transistors, e.g. FAMOS
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Applicants: SANDISK TECHNOLOGIES INC.[US/US]; Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024, US
Inventors: DONG, Yingda; US
OU, Wendy; US
MUI, Man L; US
HIGASHITANI, Masaaki; US
Agent: MAGEN, BURT; Vierra Magen Marcus LLP 575 Market Street, Suite 3750 San Francisco, California 94105, US
Priority Data:
13/910,38805.06.2013US
Title (EN) 3D NON-VOLATILE MEMORY WITH CONTROL GATE LENGTH BASED ON MEMORY HOLE DIAMETER
(FR) MÉMOIRE NON VOLATILE 3D AVEC UNE LONGUEUR DE GRILLE DE COMMANDE BASÉE SUR LE DIAMÈTRE DE TROU D'UNE MÉMOIRE
Abstract:
(EN) A structure and fabrication process are provided for a 3D stacked non-volatile memory device which compensates for variations in a memory hole diameter. The memory hole diameter is smaller at the bottom of the stack, resulting in more severe read disturb. To compensate, the word line layers are thicker at the bottom of the stack and can increase gradually from the bottom to the top of the stack. As a result, the length of the control gates of the memory cells is greater at the bottom of the stack. The capacitance between the control gate and a charge trapping layer increased in proportion to the length of the control gates. During programming, a narrower threshold voltage (Vth) distribution is achieved for these memory cells. The Vth distributions can be placed closer together and downshifted to allow lowering of a read pass voltage in a subsequent sensing operation, reducing read disturb.
(FR) L'invention concerne un processus de structure et de fabrication pour un dispositif de mémoire non volatile empilée 3D qui compense les variations dans le diamètre de trou d'une mémoire. Le diamètre de trou de la mémoire a une plus petite taille en bas de la pile, ce qui provoque des problèmes de lecture. Pour compenser, les couches de lignes de mots sont plus épaisses en bas de la pile et peuvent augmenter graduellement, du bas de la pile vers le haut de la pile. Par conséquent, la longueur des grilles de commande des cellules de mémoire est supérieure en bas de la pile. La capacité entre la grille de commande et une couche de piégeage de charge est augmentée de façon proportionnelle à la longueur des grilles de commande. Durant la programmation, une distribution de tension de seuil (Vth) plus faible est effectuée pour ces cellules de mémoire. Les distributions Vth peuvent être rapprochées et diminuées pour permettre un abaissement d'une tension de passage de lecture dans une opération de détection subséquente, réduisant les problèmes de lecture.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)