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1. (WO2014197172) THERMALLY OPTIMIZED PHASE CHANGE MEMORY CELLS AND METHODS OF FABRICATING THE SAME

Pub. No.:    WO/2014/197172    International Application No.:    PCT/US2014/037741
Publication Date: Fri Dec 12 00:59:59 CET 2014 International Filing Date: Tue May 13 01:59:59 CEST 2014
IPC: H01L 27/115
H01L 21/324
G11C 13/02
Applicants: MICRON TECHNOLOGY, INC.
Inventors: BONIARDI, Mattia
REDAELLI, Andrea
Title: THERMALLY OPTIMIZED PHASE CHANGE MEMORY CELLS AND METHODS OF FABRICATING THE SAME
Abstract:
A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the thermally insulating region, where the metallic contact layer has a second thermal resistivity lower than the first thermal resistivity.