WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 18.08.2018 at 9:00 AM CEST
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2014196753) SPI NAND FLASH MEMORY DRIVEN BY PARALLEL PIPELINE DOUBLE LATCH
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/196753 International Application No.: PCT/KR2014/004588
Publication Date: 11.12.2014 International Filing Date: 22.05.2014
IPC:
G11C 16/06 (2006.01) ,G11C 16/26 (2006.01) ,G11C 16/10 (2006.01)
Applicants: INDUSTRIAL BANK OF KOREA[KR/KR]; 79, Eulji-ro Jung-gu Seoul 100-758, KR
Inventors: KIM, Yong Soo; KR
Agent: YANG, Ki Hyuk; Yulmin IP Law Firm,2nd Floor, Nice Building, 28 Saimdang-ro Seocho-gu Seoul 137-876, KR
Priority Data:
10-2013-006476805.06.2013KR
Title (EN) SPI NAND FLASH MEMORY DRIVEN BY PARALLEL PIPELINE DOUBLE LATCH
(FR) MÉMOIRE FLASH NAND SPI PILOTÉE PAR DOUBLE VERROU DE PIPELINE PARALLÈLE
(KO) 병렬 파이프라인 더블래치로 구동되는 SPI 낸드 플래시 메모
Abstract: front page image
(EN) The present invention relates to a SPI NAND flash memory comprising a parallel pipeline double latch. The SPI NAND flash memory comprises: a page buffer, a plurality of read latches and a plurality of write latches. When reading data, the SPI NAND flash memory simultaneously performs a step of reading data from the page buffer and storing the data in one read latch and a step of outputting data already stored in another read latch. Further, when recording data, the SPI NAND flash memory simultaneously performs a step of receiving data inputted from the outside and storing the data in one write latch and a step of recording data, which is already stored in another write latch, in a write register of the page buffer.
(FR) La présente invention concerne une mémoire flash NAND SPI consistant en un double verrou de pipeline parallèle. La mémoire flash NAND SPI consiste en : une mémoire tampon de page, une pluralité de verrous de lecture et une pluralité de verrous d'écriture. Lors de la lecture des données, la mémoire flash NAND SPI effectue simultanément une étape de lecture des données à partir de la mémoire tampon de page et de stockage des données dans un verrou de lecture et une étape de sortie des données déjà stockées dans un autre verrou de lecture. En outre, lors de l'enregistrement des données, la mémoire flash NAND SPI effectue simultanément une étape de réception de données saisies depuis l'extérieur et de stockage des données dans un verrou d'écriture et une étape l'enregistrement des données qui sont déjà stockées dans un autre verrou de lecture, dans un registre d'écriture de la mémoire tampon de page.
(KO) 본 발명은 병렬 파이프라인 더블래치를 포함하여 구성된 SPI 낸드 플래시 메모리에 관한 것으로서, 페이지 버퍼, 복수 개의 읽기래치, 및 복수 개의 쓰기래치를 포함하여 구성된다. 이때, 데이터를 읽는 경우, 상기 페이지 버퍼로부터 데이터를 읽어 하나의 읽기래치에 저장하는 단계 및 다른 하나의 읽기래치에 이미 저장된 데이터를 출력하는 단계를 동시에 수행하도록 되어 있다. 또한, 데이터를 기록하는 경우, 외부로부터 데이터를 입력받아 하나의 쓰기래치에 저장하는 단계 및 다른 하나의 쓰기래치에 이미 저장된 데이터를 상기 페이지 버퍼의 쓰기 레지스터에 기록하는 단계를 동시에 수행하도록 되어 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)