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1. (WO2014196468) ETCHING LIQUID, KIT OF SAME, ETCHING METHOD USING SAME, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/196468 International Application No.: PCT/JP2014/064429
Publication Date: 11.12.2014 International Filing Date: 30.05.2014
Chapter 2 Demand Filed: 26.03.2015
IPC:
H01L 21/308 (2006.01) ,H01L 21/28 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
杉島 泰雄 SUGISHIMA, Yasuo; JP
水谷 篤史 MIZUTANI, Atsushi; JP
朴 起永 PARK, Kee Young; JP
Agent:
飯田 敏三 IIDA, Toshizo; 東京都港区新橋3丁目1番10号 石井ビル3階 ISHII Bldg. 3F, 1-10, Shimbashi 3-chome, Minato-ku, Tokyo 1050004, JP
Priority Data:
2013-11791104.06.2013JP
2013-15476925.07.2013JP
2013-27329127.12.2013JP
Title (EN) ETCHING LIQUID, KIT OF SAME, ETCHING METHOD USING SAME, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
(FR) LIQUIDE D'ATTAQUE, KIT LE COMPRENANT, PROCÉDÉ D'ATTAQUE L'UTILISANT, PROCÉDÉ DE PRODUCTION D'UN PRODUIT DE TYPE SUBSTRAT SEMI-CONDUCTEUR, ET PROCÉDÉ DE FABRICATION D'ÉLÉMENT SEMI-CONDUCTEUR
(JA) エッチング液およびそのキット、これらを用いたエッチング方法、半導体基板製品の製造方法および半導体素子の製造方法
Abstract:
(EN) An etching liquid which contains nitric acid, a fluorine-containing compound, and (A) a nitrogen-containing organic compound having a plurality of nitrogen atom-containing repeating units or (B) a phosphorus-containing compound.
(FR) L'invention concerne un liquide d'attaque comprenant de l'acide nitrique, un composé contenant du fluor, et (A) un composé organique contenant de l'azote et possédant plusieurs unités répétitives contenant un atome d'azote ou (B) un composé contenant du phosphore.
(JA)  硝酸と、含フッ素化合物と、窒素原子をもつ繰り返し単位を複数有する含窒素有機化合物Aまたはリン含有化合物Bとを含有するエッチング液。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)