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1. (WO2014196394) METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER, AND SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/196394 International Application No.: PCT/JP2014/063801
Publication Date: 11.12.2014 International Filing Date: 26.05.2014
IPC:
H01L 21/205 (2006.01) ,C30B 25/20 (2006.01) ,C30B 29/36 (2006.01) ,H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
20
the substrate being of the same materials as the epitaxial layer
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants: NIPPON STEEL & SUMITOMO METAL CORPORATION[JP/JP]; 6-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008071, JP
Inventors: AIGO, Takashi; JP
ITO, Wataru; JP
FUJIMOTO, Tatsuo; JP
Agent: AOKI, Atsushi; JP
Priority Data:
2013-11809604.06.2013JP
Title (EN) METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER, AND SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER
(FR) SUBSTRAT MONOCRISTALLIN DE CARBURE DE SILICIUM POUR TRANCHE MONOCRISTALLINE DE CARBURE DE SILICIUM ÉPITAXIALE, ET PROCÉDÉ DE FABRICATION DE CELUI-CI
(JA) エピタキシャル炭化珪素ウエハ用炭化珪素単結晶基板の製造方法及びエピタキシャル炭化珪素ウエハ用炭化珪素単結晶基板
Abstract:
(EN)  Provided is a method for manufacturing an SiC single-crystal substrate making it possible to obtain an epitaxial SiC wafer provided with a high-quality SiC single-crystal thin film devoid of surface defects, etc. Also provided is said SiC single-crystal substrate. A method for manufacturing an SiC single-crystal substrate for an epitaxial SiC wafer having a high-quality SiC single-crystal thin film devoid of surface defects, etc., wherein the surface of the SiC single-crystal substrate is polished using chemical-mechanical polishing (CMP) at a speed of no more than 100 nm/hr to remove the surface in a thickness of 100 nm or greater, and produce no more than 1 substantially round pit per cm2, the pit having a diameter of 0.5-1.5 µm and a depth of 50-500 nm
(FR) L'invention fournit un substrat monocristallin de carbure de silicium et un procédé de fabrication de ce substrat qui permet d'obtenir une tranche monocristalline de carbure de silicium épitaxiale présentant peu de défauts de surface et équipée d'une couche mince monocristalline de carbure de silicium de haute qualité. Plus précisément, l'invention concerne un procédé de fabrication de substrat monocristallin de carbure de silicium pour tranche monocristalline de carbure de silicium épitaxiale présentant peu de défauts de surface et équipée d'une couche mince monocristalline de carbure de silicium de haute qualité. Selon le procédé de l'invention, la surface du substrat monocristallin de carbure de silicium, est polie par polissage chimico-mécanique (CMP) à une vitesse de polissage inférieure ou égale à 100nm/heure, et la surface est supprimée à raison d'une épaisseur supérieure ou égale à 100nm, et des piqûres de forme sensiblement arrondie de diamètre supérieur ou égal à 0,5µm et inférieur ou égal à 1,5µm et de profondeur supérieure ou égale à 50nm et inférieure ou égale à 500nm, sont formées à raison au maximum d'une /cm2.
(JA)  表面欠陥等が少なく高品質な炭化珪素単結晶薄膜を備えたエピタキシャル炭化珪素ウエハを得ることができる炭化珪素単結晶基板の製造方法及び炭化珪素単結晶基板を提供する。 表面欠陥等が少なく高品質な炭化珪素単結晶薄膜を有するエピタキシャル炭化珪素ウエハ用炭化珪素単結晶基板の製造方法であって、炭化珪素単結晶基板の表面を研磨速度100nm/hr.以下のCMP(化学機械研磨)法で研磨して表面を厚さ100nm以上除去し、直径0.5μm以上1.5μm以下、深さ50nm以上500nm以下の略円形状のピットを1個/cm2以下とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)