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1. (WO2014196311) METHOD FOR PRODUCING COMPLEX AND SOLUTION THEREOF, METHOD FOR PRODUCING LIGHT-ABSORBING LAYER FOR SOLAR CELL, AND METHOD FOR PRODUCING SOLAR CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/196311 International Application No.: PCT/JP2014/062476
Publication Date: 11.12.2014 International Filing Date: 09.05.2014
IPC:
H01L 31/0749 (2012.01) ,H01L 21/368 (2006.01) ,H01L 31/072 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0749
including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368
using liquid deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants: TOKYO OHKA KOGYO CO., LTD.[JP/JP]; 150, Nakamaruko, Nakahara-ku, Kawasaki-shi, Kanagawa 2110012, JP
Inventors: OHHASHI Takuya; JP
NAKAMURA Akimasa; JP
IIDA Hiroyuki; JP
KUWAHARA Masaru; US
Agent: TANAI Sumio; 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620, JP
Priority Data:
61/830,29403.06.2013US
61/925,62109.01.2014US
Title (EN) METHOD FOR PRODUCING COMPLEX AND SOLUTION THEREOF, METHOD FOR PRODUCING LIGHT-ABSORBING LAYER FOR SOLAR CELL, AND METHOD FOR PRODUCING SOLAR CELL
(FR) PROCÉDÉ POUR FABRIQUER UN COMPLEXE ET UNE SOLUTION DE CE DERNIER, PROCÉDÉ POUR FABRIQUER UNE COUCHE D’ABSORPTION DE LUMIÈRE POUR UNE CELLULE SOLAIRE, ET PROCÉDÉ POUR FABRIQUER UNE CELLULE SOLAIRE
(JA) 錯体およびその溶液の製造方法、太陽電池用光吸収層の製造方法および太陽電池の製造方法
Abstract:
(EN) A method for producing a complex to be used in the formation of a light-absorbing layer for a solar cell, and a solution thereof, the method involving obtaining a reaction solution by mixing: one or more types of simplex or compound selected from a group consisting of a group 11 metal, a group 12 metal, a group 13 metal, a group 14 metal, a group 15 element, a group 11 metal compound, a group 12 metal compound, a group 13 metal compound, a group 14 metal compound, and a group-15-element-containing compound; one or more types of a chalcogen-element-containing organic compound selected from a group consisting of a mercapto-group-containing organic compound, a sulfide, a polysulfide, a thiocarbonyl-group-containing organic compound, a sulfur-containing heterocyclic compound, a hydroseleno-group-containing organic compound, a selenide, a polyselenide, a selenocarbonyl-group-containing organic compound, and a selenium-containing heterocyclic compound; a Lewis-base inorganic compound; and a group 16 element.
(FR) L’invention porte sur un procédé pour fabriquer un complexe à utiliser dans la formation d’une couche d’absorption de lumière pour une cellule solaire, et une solution de ce dernier, le procédé impliquant l’obtention d’une solution de réaction par mélange : d'un ou plusieurs types de simplex ou composé sélectionné parmi un groupe consistant en un métal de groupe 11, un métal de groupe 12, un métal de groupe 13, un métal de groupe 14, un élément de groupe 15, un composé métallique de groupe 11, un composé métallique de groupe 12, un composé métallique de groupe 13, un composé métallique de groupe 14 et un composé contenant un élément de groupe 15 ; d'un ou plusieurs types d’un composé organique contenant un élément chalcogéné sélectionné parmi un groupe consistant en un composé organique contenant un groupe mercapto, un sulfure, un polysulfide, un composé organique contenant un groupe thiocarbonyle, un composé hétérocyclique contenant du soufre, un composé organique contenant un groupe hydroséléno, un séléniure, un polyséléniure, un composé organique contenant un groupe sélénocarbonyle et un composé hétérocyclique contenant du sélénium ; d'un composé inorganique à base de Lewis ; et d'un élément de groupe 16.
(JA)  太陽電池の光吸収層の形成に用いられる錯体およびその溶液の製造方法であって、第11族金属、第12族金属、第13族金属、第14族金属、第15族元素、第11族金属化合物、第12族金属化合物、第13族金属化合物、第14族金属化合物及び第15族元素含有化合物からなる群より選ばれる少なくとも1種の単体または化合物と、メルカプト基含有有機化合物、スルフィド、ポリスルフィド、チオカルボニル基含有有機化合物、硫黄含有複素環式化合物、ヒドロセレノ基含有有機化合物、セレニド、ポリセレニド、セレノカルボニル基含有有機化合物及びセレン含有複素環式化合物からなる群より選ばれる少なくとも1種のカルコゲン元素含有有機化合物と、ルイス塩基性無機化合物と、第16族元素とを混合して反応液を得ることを含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)