WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2014194336) ANALOG TRANSCAP DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/194336 International Application No.: PCT/US2014/042663
Publication Date: 04.12.2014 International Filing Date: 17.06.2014
IPC:
H01L 29/93 (2006.01) ,H01G 7/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
93
Variable-capacitance diodes, e.g. varactors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
7
Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
Applicants: MARINO, Fabio Alessio[IT/IT]; IT
MENEGOLI, Paolo[US/US]; US
Inventors: MARINO, Fabio Alessio; IT
MENEGOLI, Paolo; US
Priority Data:
13/888,36807.05.2013US
Title (EN) ANALOG TRANSCAP DEVICE
(FR) DISPOSITIF TRANSCAP ANALOGIQUE
Abstract:
(EN) A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.
(FR) Utilisation : fabrication de structures semi-conductrices de dispositifs à capacité variable. La présente invention concerne une structure de condensateur variable à semi-conducteur à base de MOS, appelée transcap, qui comprend : une première plaque de capacité équivalente; une deuxième plaque de capacité équivalente; au moins une région de commande; la valeur de capacité entre les première et deuxième plaques de capacité du condensateur variable à semi-conducteur étant modifiée par la variation de la tension de commande; la région de commande forme une jonction de redressement avec la première plaque de capacité, et la variation de tension de commande provoque une variation de chute de tension de commande dans la jonction de redressement. Résultat technique : possibilité de découplage du signal de courant alternatif de la tension de commande à courant continu, ce qui empêche les distorsions et améliore des performances du dispositif telles que la fiabilité de commande.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)