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1. (WO2014193371) WRITABLE DEVICE BASED ON ALTERNATING CURRENT

Pub. No.:    WO/2014/193371    International Application No.:    PCT/US2013/043191
Publication Date: Fri Dec 05 00:59:59 CET 2014 International Filing Date: Thu May 30 01:59:59 CEST 2013
IPC: G11C 16/06
Applicants: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventors: BROOKS, Robert J.
Title: WRITABLE DEVICE BASED ON ALTERNATING CURRENT
Abstract:
A nonvolatile memory device is writable to a high resistance state and a low resistance state. The nonvolatile memory device may be heated to at least a threshold temperature, based on application of an alternating current (AC) signal, and may be written based on application of a voltage bias.