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1. (WO2014192207) METHOD FOR MANUFACTURING BONDED WAFER

Pub. No.:    WO/2014/192207    International Application No.:    PCT/JP2014/001680
Publication Date: Fri Dec 05 00:59:59 CET 2014 International Filing Date: Wed Mar 26 00:59:59 CET 2014
IPC: H01L 21/02
H01L 21/324
H01L 27/12
Applicants: SHIN-ETSU HANDOTAI CO.,LTD.
信越半導体株式会社
Inventors: ISHIZUKA, Toru
石塚 徹
KOBAYASHI, Norihiro
小林 徳弘
Title: METHOD FOR MANUFACTURING BONDED WAFER
Abstract:
 The present invention is a method for manufacturing a bonded wafer having a step for reducing the thickness of a thin film by performing an RTA treatment in a hydrogen-containing atmosphere on a bonded wafer after separating the bond wafer constituting the bonded wafer, and then performing a sacrificial oxidation treatment, the RTA treatment being performed under conditions in which the holding start temperature of the RTA treatment is kept above 1150°C, and the holding end temperature of the RTA treatment is kept at or below 1150°C. Thereby provided is a method for manufacturing a bonded wafer in which, when the RTA treatment and the sacrificial oxidation treatment are combined to flatten the thin-film surface of the bonded wafer and reduce the thickness of the thin film, any increase in BMD density is minimized and the thin-film surface is adequately flattened.